Texas Instruments
Texas Instruments Incorporated (TI) is a global semiconductor design and manufacturing company that develops analog ICs and embedded processors. By employing the worlds brightest minds, TI creates innovations that shape the future of technology. TI is helping more than 100,000 customers transform the future, today.
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Logic | 2 | 1 | The SN74LVTH162245 is a 16-bit (dual-octal) noninverting 3-state transceiver designed for low-voltage (3.3-V) VCCoperation, but with the capability to provide a TTL interface to a 5-V system environment. This device can be used as two 8-bit transceivers or one 16-bit transceiver. The device allows data transmission from the A bus... Read More | |
Texas InstrumentsCLVTH16244Enhanced product 16-ch, 2.7-V to 3.6-V buffers with TTL-compatible CMOS inputs and 3-state outputs | Buffers, Drivers, Receivers, Transceivers | 5 | 1 | The SN74LVTH16244A is a 16-bit buffer and line driver designed for low-voltage (3.3 V) VCCoperation, but with the capability to provide a TTL interface to a 5-V system environment. This device can be used as four 4-bit buffers, two 8-bit buffers, or one 16-bit buffer. This device provides true outputs... Read More |
Texas InstrumentsCLVTH16373Enhanced Product 3.3-V Abt 16-Bit Transparent D-Type Latches With 3-State Outputs | Integrated Circuits (ICs) | 2 | 1 | The SN74LVTH16373 is a 16-bit transparent D-type latch with tri-state outputs designed for low-voltage (3.3 V) VCCoperation, but with the capability to provide a TTL interface to a 5-V system environment. This device is particularly suitable for implementing buffer registers, I/O ports, bidirectional bus drivers, and working registers. This device... Read More |
Texas InstrumentsCLVTH16374Enhanced Product 3.3-V Abt 16-Bit Edge-Triggered D-Type Flip-Flops With 3-State Outputs | Flip Flops | 2 | 1 | The SN74LVTH16374 is a 16-bit edge-triggered D-type flip-flop with 3-state outputs designed for low-voltage (3.3-V) VCCoperation, but with the capability to provide a TTL interface to a 5-V system environment. This device is particularly suitable for implementing buffer registers, I/O ports, bidirectional bus drivers, and working registers. This device can... Read More |
Texas InstrumentsCLVTH16543Enhanced Product 3.3-V Abt 16-Bit Registered Transceiver With 3-State Outputs | Integrated Circuits (ICs) | 2 | 1 | The SN74LVTH16543 is a 16–bit registered transceiver designed for low–voltage (3.3–V) VCCoperation, but with the capability to provide a TTL interface to a 5–V system environment. This device can be used as two 8–bit transceivers or one 16–bit transceiver. Separate latch–enable (LEABorLEBA) and output–enable (OEABorOEBA) inputs are provided for each... Read More |
Texas InstrumentsCLVTH16652Enhanced Product 3.3 V Abt 16-Bit Bus Transceivers And Registers With 3-State Outputs | Logic | 1 | 1 | The SN74LVTH16652 is a 16-bit bus transceiver designed for low-voltage (3.3-V) VCCoperation, but with the capability to provide a TTL interface to a 5-V system environment. These devices can be used as two 8-bit transceivers or one 16-bit transceiver. Output-enable (OEAB and OEBA\) inputs are provided to control the transceiver... Read More |
| Embedded | 3 | 1 | The CP3SP33 connectivity processor combines high performance with the massive integration needed for embedded Bluetooth applications. A powerful RISC core with 4Kbyte instruction cache and a Teak® DSP coprocessor provides high computing bandwidth, DMA-driven hardware communications peripherals provide high I/O bandwidth, and an external bus provides system expandability. On-chip communications... Read More | |
| FETs, MOSFETs | 1 | 1 | This 12-V, 26-mΩ, N-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. This 12-V, 26-mΩ, N-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible... Read More | |
| FETs, MOSFETs | 1 | 1 | This 12-V, 26-mΩ, N-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. This 12-V, 26-mΩ, N-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible... Read More | |
| FETs, MOSFETs | 1 | 10 | This 12-V, 7.5-mΩ NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The SON 2 × 2 offers excellent thermal performance for the size of the package. This 12-V, 7.5-mΩ NexFET™ power MOSFET has been designed to minimize losses in power conversion and... Read More | |
| Transistors | 2 | 10 | This 14.6 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1 mm outline with excellent thermal characteristics and an ultra low profile. This 14.6 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance... Read More | |
| Discrete Semiconductor Products | 1 | 10 | This 14.6 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1 mm outline with excellent thermal characteristics and an ultra low profile. This 14.6 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance... Read More | |
| Transistors | 1 | 1 | The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal... Read More | |
Texas InstrumentsCSD13303W101512-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 20 mOhm | Transistors | 1 | 1 | The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal... Read More |
| Transistors | 2 | 1 | This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics and an ultra low profile. This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance... Read More | |
| Transistors | 2 | 1 | This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics and an ultra low profile. This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance... Read More | |
Texas InstrumentsCSD1338012-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection | FETs, MOSFETs | 2 | 1 | This 63-mΩ, 12-V N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. . . This 63-mΩ, 12-V N-Channel FemtoFET™ MOSFET is designed and optimized... Read More |
Texas InstrumentsCSD13380F312-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection | FETs, MOSFETs | 2 | 1 | This 63-mΩ, 12-V N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. . . This 63-mΩ, 12-V N-Channel FemtoFET™ MOSFET is designed and optimized... Read More |
Texas InstrumentsCSD1338112-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 180 mOhm, gate ESD protection | Transistors | 1 | 10 | This 140-mΩ, 12-V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. This 140-mΩ, 12-V N-channel FemtoFET™ MOSFET technology is designed... Read More |
Texas InstrumentsCSD13381F412-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 180 mOhm, gate ESD protection | Transistors | 2 | 1 | This 140-mΩ, 12-V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. This 140-mΩ, 12-V N-channel FemtoFET™ MOSFET technology is designed... Read More |