CSD13380F3 Series
12-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
12-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection
| Part | Mounting Type | Vgs (Max) [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Supplier Device Package | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD13380F3T | Surface Mount | 8 V | 150 °C | -55 °C | MOSFET (Metal Oxide) | 3-PICOSTAR | 12 V | 3.6 A | 1.3 V | 500 mW | 3-XFDFN | 1.8 V, 4.5 V | N-Channel | 1.2 nC | 156 pF | 76 mOhm |
Texas Instruments CSD13380F3 | Surface Mount | 8 V | 150 °C | -55 °C | MOSFET (Metal Oxide) | 3-PICOSTAR | 12 V | 3.6 A | 1.3 V | 500 mW | 3-XFDFN | 1.8 V, 4.5 V | N-Channel | 1.2 nC | 156 pF | 76 mOhm |
Key Features
• Low on resistanceUltra-low Qgand QgdHigh operating drain currentUltra-small footprint0.73 mm × 0.64 mmLow profile0.36-mm max heightIntegrated ESD protection diodeRated > 3-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliantLow on resistanceUltra-low Qgand QgdHigh operating drain currentUltra-small footprint0.73 mm × 0.64 mmLow profile0.36-mm max heightIntegrated ESD protection diodeRated > 3-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliant
Description
AI
This 63-mΩ, 12-V N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.
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This 63-mΩ, 12-V N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.
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