CSD13380F3T
Active12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.6 MM X 0.7 MM, 76 MOHM, GATE ESD PROTECTION
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CSD13380F3T
Active12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.6 MM X 0.7 MM, 76 MOHM, GATE ESD PROTECTION
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | CSD13380F3T | CSD13380 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.6 A | 3.6 A |
| Drain to Source Voltage (Vdss) | 12 V | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8 V, 4.5 V | 1.8 - 4.5 V |
| FET Type | N-Channel | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.2 nC | 1.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 156 pF | 156 pF |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | 3-XFDFN | 3-XFDFN |
| Power Dissipation (Max) [Max] | 500 mW | 500 mW |
| Rds On (Max) @ Id, Vgs | 76 mOhm | 76 mOhm |
| Supplier Device Package | 3-PICOSTAR | 3-PICOSTAR |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 8 V | 8 V |
| Vgs(th) (Max) @ Id | 1.3 V | 1.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.91 | |
| 10 | $ 0.79 | |||
| 100 | $ 0.55 | |||
| Digi-Reel® | 1 | $ 0.91 | ||
| 10 | $ 0.79 | |||
| 100 | $ 0.55 | |||
| Tape & Reel (TR) | 250 | $ 0.37 | ||
| 500 | $ 0.32 | |||
| 1250 | $ 0.30 | |||
| Texas Instruments | SMALL T&R | 1 | $ 0.73 | |
| 100 | $ 0.48 | |||
| 250 | $ 0.36 | |||
| 1000 | $ 0.24 | |||
CSD13380 Series
12-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection
| Part | Mounting Type | Vgs (Max) [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Supplier Device Package | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD13380F3T | Surface Mount | 8 V | 150 °C | -55 °C | MOSFET (Metal Oxide) | 3-PICOSTAR | 12 V | 3.6 A | 1.3 V | 500 mW | 3-XFDFN | 1.8 V, 4.5 V | N-Channel | 1.2 nC | 156 pF | 76 mOhm |
Texas Instruments CSD13380F3 | Surface Mount | 8 V | 150 °C | -55 °C | MOSFET (Metal Oxide) | 3-PICOSTAR | 12 V | 3.6 A | 1.3 V | 500 mW | 3-XFDFN | 1.8 V, 4.5 V | N-Channel | 1.2 nC | 156 pF | 76 mOhm |
Description
General part information
CSD13380 Series
This 63-mΩ, 12-V N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.
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Documents
Technical documentation and resources