CSD13303W1015 Series
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 20 mOhm
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 20 mOhm
| Part | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id [Max] | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Package / Case | Power Dissipation (Max) | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Rds On (Max) @ Id, Vgs | FET Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD13303W1015 | 3.5 A | 1.2 V | 2.5 V, 4.5 V | 6-DSBGA (1x1.5) | 4.7 nC | 8 V | 6-UFBGA, DSBGA | 1.65 W | MOSFET (Metal Oxide) | 150 °C | -55 °C | 715 pF | Surface Mount | 20 mOhm | N-Channel | 12 V |
Key Features
• Ultra Low on ResistanceUltra Low Qg and QgdSmall FootprintLow Profile 0.62 mm HeightPb FreeRoHS CompliantHalogen FreeCSP 1 × 1.5 mm Wafer Level PackageUltra Low on ResistanceUltra Low Qg and QgdSmall FootprintLow Profile 0.62 mm HeightPb FreeRoHS CompliantHalogen FreeCSP 1 × 1.5 mm Wafer Level Package
Description
AI
The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.
The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.