CSD13303W1015
Active12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1.5 MM, 20 MOHM
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CSD13303W1015
Active12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1.5 MM, 20 MOHM
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD13303W1015 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.5 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 715 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UFBGA, DSBGA |
| Power Dissipation (Max) | 1.65 W |
| Rds On (Max) @ Id, Vgs | 20 mOhm |
| Supplier Device Package | 6-DSBGA (1x1.5) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id [Max] | 1.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.53 | |
| 10 | $ 0.45 | |||
| 100 | $ 0.32 | |||
| 500 | $ 0.25 | |||
| 1000 | $ 0.20 | |||
| Digi-Reel® | 1 | $ 0.53 | ||
| 10 | $ 0.45 | |||
| 100 | $ 0.32 | |||
| 500 | $ 0.25 | |||
| 1000 | $ 0.20 | |||
| Tape & Reel (TR) | 3000 | $ 0.15 | ||
| 6000 | $ 0.15 | |||
| 9000 | $ 0.14 | |||
| 30000 | $ 0.13 | |||
| 75000 | $ 0.13 | |||
| Texas Instruments | LARGE T&R | 1 | $ 0.30 | |
| 100 | $ 0.20 | |||
| 250 | $ 0.16 | |||
| 1000 | $ 0.10 | |||
CSD13303W1015 Series
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 20 mOhm
| Part | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id [Max] | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Package / Case | Power Dissipation (Max) | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Rds On (Max) @ Id, Vgs | FET Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD13303W1015 | 3.5 A | 1.2 V | 2.5 V, 4.5 V | 6-DSBGA (1x1.5) | 4.7 nC | 8 V | 6-UFBGA, DSBGA | 1.65 W | MOSFET (Metal Oxide) | 150 °C | -55 °C | 715 pF | Surface Mount | 20 mOhm | N-Channel | 12 V |
Description
General part information
CSD13303W1015 Series
The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.
The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.
Documents
Technical documentation and resources