CSD13381F4 Series
12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 180 mOhm, gate ESD protection
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 180 mOhm, gate ESD protection
| Part | Gate Charge (Qg) (Max) @ Vgs | FET Type | Technology | Mounting Type | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Package / Case | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD13381F4T | 1.4 nC | N-Channel | MOSFET (Metal Oxide) | Surface Mount | 3-PICOSTAR | 2.1 A | 150 °C | -55 °C | 1.8 V, 4.5 V | 8 V | 200 pF | 180 mOhm | 12 V | 3-XFDFN | 500 mW | 1.1 V |
Texas Instruments CSD13381F4 | 1.4 nC | N-Channel | MOSFET (Metal Oxide) | Surface Mount | 3-PICOSTAR | 2.1 A | 150 °C | -55 °C | 1.8 V, 4.5 V | 8 V | 200 pF | 180 mOhm | 12 V | 3-XFDFN | 500 mW | 1.1 V |
Key Features
• Low on-resistanceLow Qgand QgdLow threshold voltageUltra-small footprint (0402 case size)1.0 mm × 0.6 mmUltra-low profileMaximum height: 0.36-mmIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliantLow on-resistanceLow Qgand QgdLow threshold voltageUltra-small footprint (0402 case size)1.0 mm × 0.6 mmUltra-low profileMaximum height: 0.36-mmIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliant
Description
AI
This 140-mΩ, 12-V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
This 140-mΩ, 12-V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.