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CSD13381F4T - CSDxxxxF4T

CSD13381F4T

Active
Texas Instruments

12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 1 MM X 0.6MM, 180 MOHM, GATE ESD PROTECTION 3-PICOSTAR -55 TO 150

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CSD13381F4T - CSDxxxxF4T

CSD13381F4T

Active
Texas Instruments

12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 1 MM X 0.6MM, 180 MOHM, GATE ESD PROTECTION 3-PICOSTAR -55 TO 150

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationCSD13381F4TCSD13381F4 Series
Current - Continuous Drain (Id) @ 25°C2.1 A2.1 A
Drain to Source Voltage (Vdss)12 V12 V
Drive Voltage (Max Rds On, Min Rds On)1.8 V, 4.5 V1.8 - 4.5 V
FET TypeN-ChannelN-Channel
Gate Charge (Qg) (Max) @ Vgs1.4 nC1.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]200 pF200 pF
Mounting TypeSurface MountSurface Mount
Operating Temperature [Max]150 °C150 °C
Operating Temperature [Min]-55 °C-55 °C
Package / Case3-XFDFN3-XFDFN
Power Dissipation (Max) [Max]500 mW500 mW
Rds On (Max) @ Id, Vgs [Max]180 mOhm180 mOhm
Supplier Device Package3-PICOSTAR3-PICOSTAR
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs (Max) [Max]8 V8 V
Vgs(th) (Max) @ Id1.1 V1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
Arrow ElectronicsN/A 0$ 0.31
0$ 0.31
1$ 0.12
1$ 0.12
10$ 0.12
10$ 0.12
25$ 0.11
25$ 0.11
250$ 0.28
250$ 0.28
CHIPMALL.COM LIMITEDN/A 5$ 0.05
5$ 0.05
Chip1StopN/A 1$ 0.24
1$ 0.23
10$ 0.23
50$ 0.23
50$ 0.23
200$ 0.23
DigiKeyN/A 1$ 1.03
1$ 1.05
10$ 0.69
10$ 0.71
100$ 0.48
100$ 0.49
250$ 0.42
250$ 0.43
500$ 0.38
500$ 0.39
750$ 0.36
750$ 0.37
1250$ 0.34
1250$ 0.35
1750$ 0.33
1750$ 0.34
2500$ 0.32
2500$ 0.32
6250$ 0.29
6250$ 0.30
DigikeyCut Tape (CT) 1$ 0.64
10$ 0.56
100$ 0.39
Digi-Reel® 1$ 0.64
10$ 0.56
100$ 0.39
Tape & Reel (TR) 250$ 0.53
500$ 0.46
1250$ 0.39
2500$ 0.35
6250$ 0.33
12500$ 0.30
25000$ 0.30
FarnellN/A 1$ 0.53
10$ 0.46
100$ 0.46
100$ 0.46
500$ 0.46
500$ 0.46
1000$ 0.46
1000$ 0.46
5000$ 0.46
5000$ 0.46
LCSCN/A 1$ 0.49
1$ 0.49
10$ 0.42
10$ 0.42
30$ 0.36
30$ 0.36
250$ 0.32
250$ 0.32
500$ 0.31
500$ 0.31
1000$ 0.30
1000$ 0.30
Mouser ElectronicsN/A 1$ 0.31
1$ 0.31
10$ 0.30
10$ 0.30
250$ 0.30
250$ 0.30
500$ 0.30
500$ 0.30
25000$ 0.29
25000$ 0.29
NewarkN/A 1$ 1.33
10$ 1.28
25$ 1.23
50$ 1.18
100$ 1.14
250$ 1.11
500$ 1.09
1000$ 1.07
RSN/A 10$ 0.33
50$ 0.40
50$ 0.40
100$ 0.37
100$ 0.37
250$ 0.33
250$ 0.37
250$ 0.37
500$ 0.37
500$ 0.36
500$ 0.36
1250$ 0.36
2500$ 0.36
5000$ 0.42
Rochester ElectronicsN/A 1$ 0.33
1$ 0.33
25$ 0.33
25$ 0.33
100$ 0.31
100$ 0.31
500$ 0.30
500$ 0.30
1000$ 0.28
1000$ 0.28
TMEN/A 1$ 0.79
1$ 0.79
5$ 0.75
5$ 0.75
25$ 0.67
25$ 0.67
100$ 0.59
100$ 0.59
250$ 0.50
250$ 0.50
Texas InstrumentsSMALL T&R 1$ 0.74
100$ 0.48
250$ 0.36
1000$ 0.24
VericalN/A 20$ 0.12
20$ 0.12
25$ 0.11
25$ 0.11

CSD13381F4 Series

12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 180 mOhm, gate ESD protection

PartGate Charge (Qg) (Max) @ VgsFET TypeTechnologyMounting TypeSupplier Device PackageCurrent - Continuous Drain (Id) @ 25°COperating Temperature [Max]Operating Temperature [Min]Drive Voltage (Max Rds On, Min Rds On)Vgs (Max) [Max]Input Capacitance (Ciss) (Max) @ Vds [Max]Rds On (Max) @ Id, Vgs [Max]Drain to Source Voltage (Vdss)Package / CasePower Dissipation (Max) [Max]Vgs(th) (Max) @ Id
Texas Instruments
CSD13381F4T
1.4 nC
N-Channel
MOSFET (Metal Oxide)
Surface Mount
3-PICOSTAR
2.1 A
150 °C
-55 °C
1.8 V, 4.5 V
8 V
200 pF
180 mOhm
12 V
3-XFDFN
500 mW
1.1 V
Texas Instruments
CSD13381F4
1.4 nC
N-Channel
MOSFET (Metal Oxide)
Surface Mount
3-PICOSTAR
2.1 A
150 °C
-55 °C
1.8 V, 4.5 V
8 V
200 pF
180 mOhm
12 V
3-XFDFN
500 mW
1.1 V

Description

General part information

CSD13381F4 Series

This 140-mΩ, 12-V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

This 140-mΩ, 12-V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.