CSD13381F4

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Texas Instruments

12-V, N CHANNEL NEXFET&TRADE; POWER MOSFET, SINGLE LGA 1 MM X 0.6MM, 180 MOHM, GATE ESD PROTECTION 3-PICOSTAR -55 TO 150

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DocumentsSolving Assembly Issues with Chip Scale Power MOSFETs Semiconductor and IC Package Thermal Metrics (Rev. D)+10

CSD13381F4

Active

Texas Instruments

12-V, N CHANNEL NEXFET&TRADE; POWER MOSFET, SINGLE LGA 1 MM X 0.6MM, 180 MOHM, GATE ESD PROTECTION 3-PICOSTAR -55 TO 150

Deep-Dive with AI

DocumentsSolving Assembly Issues with Chip Scale Power MOSFETs Semiconductor and IC Package Thermal Metrics (Rev. D)+10

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	CSD13381F4	CSD13381F4 Series

Current - Continuous Drain (Id) @ 25°C	2.1 A	2.1 A
Drain to Source Voltage (Vdss)	12 V	12 V
Drive Voltage (Max Rds On, Min Rds On)	1.8 V, 4.5 V	1.8 - 4.5 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.4 nC	1.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	200 pF	200 pF
Mounting Type	Surface Mount	Surface Mount
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	3-XFDFN	3-XFDFN
Power Dissipation (Max) [Max]	500 mW	500 mW
Rds On (Max) @ Id, Vgs [Max]	180 mOhm	180 mOhm
Supplier Device Package	3-PICOSTAR	3-PICOSTAR
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V	8 V
Vgs(th) (Max) @ Id	1.1 V	1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

CHIPMALL.COM LIMITED	N/A	5	$ 0.04
		5	$ 0.05
		50	$ 0.05
		150	$ 0.05
		500	$ 0.05
Chip One Stop	Cut Tape	25	$ 0.20
		50	$ 0.16
		100	$ 0.07
		200	$ 0.07
		500	$ 0.07
		1000	$ 0.06
		2000	$ 0.06
Chip1Stop	N/A	25	$ 0.16
		50	$ 0.13
		100	$ 0.07
		200	$ 0.07
		500	$ 0.07
		1000	$ 0.06
		2000	$ 0.05
DigiKey	N/A	1	$ 0.26
		10	$ 0.17
		100	$ 0.12
		500	$ 0.09
		1000	$ 0.08
		3000	$ 0.06
		6000	$ 0.05
		9000	$ 0.05
Digikey	Cut Tape (CT)	1	$ 0.30
		10	$ 0.21
		100	$ 0.11
		500	$ 0.09
		1000	$ 0.06
	Digi-Reel®	1	$ 0.30
		10	$ 0.21
		100	$ 0.11
		500	$ 0.09
		1000	$ 0.06
	Tape & Reel (TR)	3000	$ 0.05
		6000	$ 0.05
		9000	$ 0.05
LCSC	N/A	10	$ 0.05
		100	$ 0.04
		300	$ 0.03
		3000	$ 0.03
		6000	$ 0.03
		9000	$ 0.03
Mouser Electronics	N/A	1	$ 0.26
		10	$ 0.17
		100	$ 0.08
		1000	$ 0.07
		3000	$ 0.05
		45000	$ 0.04
		99000	$ 0.04
Quest Components	N/A	1	$ 0.27
		1	$ 0.27
		47	$ 0.12
		47	$ 0.12
		413	$ 0.08
		413	$ 0.08
Semour Electronics Co Ltd	N/A	1	$ 0.06
		200	$ 0.04
		1500	$ 0.03
		3000	$ 0.03
Texas Instruments	LARGE T&R	1	$ 0.10
		100	$ 0.07
		250	$ 0.05
		1000	$ 0.03
Win Source Electronics	N/A	735	$ 0.07
		735	$ 0.07
		735	$ 0.07
		1780	$ 0.06
		1780	$ 0.06
		1780	$ 0.06
		2760	$ 0.05
		2760	$ 0.05
		2760	$ 0.05
		3800	$ 0.05
		3800	$ 0.05
		3800	$ 0.05
		4915	$ 0.05
		4915	$ 0.05
		4915	$ 0.05
		6580	$ 0.05
		6580	$ 0.05
		6580	$ 0.05

CSD13381F4 Series

12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 180 mOhm, gate ESD protection

Part	Gate Charge (Qg) (Max) @ Vgs	FET Type	Technology	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id
Texas Instruments CSD13381F4T	1.4 nC	N-Channel	MOSFET (Metal Oxide)	Surface Mount	3-PICOSTAR	2.1 A	150 °C	-55 °C	1.8 V, 4.5 V	8 V	200 pF	180 mOhm	12 V	3-XFDFN	500 mW	1.1 V
Texas Instruments CSD13381F4	1.4 nC	N-Channel	MOSFET (Metal Oxide)	Surface Mount	3-PICOSTAR	2.1 A	150 °C	-55 °C	1.8 V, 4.5 V	8 V	200 pF	180 mOhm	12 V	3-XFDFN	500 mW	1.1 V

Description

General part information

CSD13381F4 Series

This 140-mΩ, 12-V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.