CSD13306W Series
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm
| Part | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Vgs(th) (Max) @ Id | Vgs (Max) [Max] | Vgs (Max) [Min] | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | FET Type | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD13306W | 6-DSBGA (1x1.5) | 11.2 nC | Surface Mount | 1.3 V | 10 V | -10 V | 1.9 W | 12 V | 10.2 mOhm | 3.5 A | MOSFET (Metal Oxide) | 150 °C | -55 °C | 1370 pF | 6-UFBGA, DSBGA | N-Channel | 2.5 V, 4.5 V |
Texas Instruments CSD13306WT | 6-DSBGA (1x1.5) | 11.2 nC | Surface Mount | 1.3 V | 10 V | -10 V | 1.9 W | 12 V | 10.2 mOhm | 3.5 A | MOSFET (Metal Oxide) | 150 °C | -55 °C | 1370 pF | 6-UFBGA, DSBGA | N-Channel | 2.5 V, 4.5 V |
Key Features
• Ultra Low on ResistanceLow Qgand QgdSmall Footprint 1 × 1.5 mmLow Profile 0.62 mm HeightPb FreeRoHS CompliantHalogen FreeUltra Low on ResistanceLow Qgand QgdSmall Footprint 1 × 1.5 mmLow Profile 0.62 mm HeightPb FreeRoHS CompliantHalogen Free
Description
AI
This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics and an ultra low profile.
This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics and an ultra low profile.