CSD13306WT
Active12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1.5 MM, 10.2 MOHM 6-DSBGA -55 TO 150
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CSD13306WT
Active12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1.5 MM, 10.2 MOHM 6-DSBGA -55 TO 150
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | CSD13306WT | CSD13306 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.5 A | 3.5 A |
| Drain to Source Voltage (Vdss) | 12 V | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V, 4.5 V | 2.5 - 4.5 V |
| FET Type | N-Channel | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11.2 nC | 11.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1370 pF | 1370 pF |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | 6-UFBGA, DSBGA | 6-UFBGA, DSBGA |
| Power Dissipation (Max) | 1.9 W | 1.9 W |
| Rds On (Max) @ Id, Vgs | 10.2 mOhm | 10.2 mOhm |
| Supplier Device Package | 6-DSBGA (1x1.5) | 6-DSBGA (1x1.5) |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 10 V | 10 V |
| Vgs (Max) [Min] | -10 V | -10 V |
| Vgs(th) (Max) @ Id | 1.3 V | 1.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Arrow Electronics | Cut Strips | 0 | $ 0.41 | |
| 1 | $ 0.32 | |||
| 10 | $ 0.32 | |||
| 25 | $ 0.31 | |||
| 100 | $ 0.31 | |||
| N/A | 250 | $ 0.37 | ||
| DigiKey | Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | 1 | $ 1.65 | |
| 10 | $ 1.05 | |||
| 100 | $ 0.70 | |||
| 250 | $ 0.55 | |||
| 500 | $ 0.50 | |||
| 750 | $ 0.48 | |||
| 1250 | $ 0.45 | |||
| 1750 | $ 0.43 | |||
| 2500 | $ 0.42 | |||
| 6250 | $ 0.40 | |||
| Digikey | Cut Tape (CT) | 1 | $ 1.07 | |
| 10 | $ 0.88 | |||
| 100 | $ 0.68 | |||
| Digi-Reel® | 1 | $ 1.07 | ||
| 10 | $ 0.88 | |||
| 100 | $ 0.68 | |||
| Tape & Reel (TR) | 250 | $ 0.52 | ||
| 500 | $ 0.47 | |||
| 750 | $ 0.45 | |||
| 1250 | $ 0.42 | |||
| 1750 | $ 0.40 | |||
| Mouser Electronics | N/A | 1 | $ 0.97 | |
| 10 | $ 0.74 | |||
| 100 | $ 0.49 | |||
| 250 | $ 0.49 | |||
| 500 | $ 0.47 | |||
| 1000 | $ 0.43 | |||
| 2500 | $ 0.41 | |||
| 5000 | $ 0.40 | |||
| Rochester Electronics | N/A | 1 | $ 0.45 | |
| 25 | $ 0.44 | |||
| 100 | $ 0.42 | |||
| 500 | $ 0.40 | |||
| 1000 | $ 0.38 | |||
| TME | N/A | 1 | $ 0.84 | |
| 5 | $ 0.76 | |||
| 25 | $ 0.67 | |||
| 100 | $ 0.60 | |||
| 250 | $ 0.56 | |||
| Texas Instruments | SMALL T&R | 1 | $ 0.92 | |
| 100 | $ 0.63 | |||
| 250 | $ 0.48 | |||
| 1000 | $ 0.32 | |||
| Verical | N/A | 15 | $ 0.31 | |
CSD13306 Series
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm
| Part | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Vgs(th) (Max) @ Id | Vgs (Max) [Max] | Vgs (Max) [Min] | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | FET Type | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD13306W | 6-DSBGA (1x1.5) | 11.2 nC | Surface Mount | 1.3 V | 10 V | -10 V | 1.9 W | 12 V | 10.2 mOhm | 3.5 A | MOSFET (Metal Oxide) | 150 °C | -55 °C | 1370 pF | 6-UFBGA, DSBGA | N-Channel | 2.5 V, 4.5 V |
Texas Instruments CSD13306WT | 6-DSBGA (1x1.5) | 11.2 nC | Surface Mount | 1.3 V | 10 V | -10 V | 1.9 W | 12 V | 10.2 mOhm | 3.5 A | MOSFET (Metal Oxide) | 150 °C | -55 °C | 1370 pF | 6-UFBGA, DSBGA | N-Channel | 2.5 V, 4.5 V |
Description
General part information
CSD13306 Series
This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics and an ultra low profile.
This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics and an ultra low profile.
Documents
Technical documentation and resources