CSD13306W
Active12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1.5 MM, 10.2 MOHM 6-DSBGA
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CSD13306W
Active12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1.5 MM, 10.2 MOHM 6-DSBGA
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | CSD13306W | CSD13306 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.5 A | 3.5 A |
| Drain to Source Voltage (Vdss) | 12 V | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V, 4.5 V | 2.5 - 4.5 V |
| FET Type | N-Channel | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11.2 nC | 11.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1370 pF | 1370 pF |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | 6-UFBGA, DSBGA | 6-UFBGA, DSBGA |
| Power Dissipation (Max) | 1.9 W | 1.9 W |
| Rds On (Max) @ Id, Vgs | 10.2 mOhm | 10.2 mOhm |
| Supplier Device Package | 6-DSBGA (1x1.5) | 6-DSBGA (1x1.5) |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 10 V | 10 V |
| Vgs (Max) [Min] | -10 V | -10 V |
| Vgs(th) (Max) @ Id | 1.3 V | 1.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| CHIPMALL.COM LIMITED | N/A | 5 | $ 0.31 | |
| 50 | $ 0.25 | |||
| 150 | $ 0.23 | |||
| 500 | $ 0.20 | |||
| 3000 | $ 0.19 | |||
| 6000 | $ 0.19 | |||
| DigiKey | N/A | 1 | $ 0.80 | |
| 10 | $ 0.49 | |||
| 100 | $ 0.32 | |||
| 500 | $ 0.24 | |||
| 1000 | $ 0.22 | |||
| 3000 | $ 0.15 | |||
| 6000 | $ 0.14 | |||
| 9000 | $ 0.13 | |||
| 15000 | $ 0.13 | |||
| 21000 | $ 0.13 | |||
| Digikey | Cut Tape (CT) | 1 | $ 0.52 | |
| 10 | $ 0.44 | |||
| 100 | $ 0.31 | |||
| 500 | $ 0.24 | |||
| 1000 | $ 0.19 | |||
| Digi-Reel® | 1 | $ 0.52 | ||
| 10 | $ 0.44 | |||
| 100 | $ 0.31 | |||
| 500 | $ 0.24 | |||
| 1000 | $ 0.19 | |||
| Tape & Reel (TR) | 3000 | $ 0.13 | ||
| LCSC | N/A | 5 | $ 0.26 | |
| 50 | $ 0.21 | |||
| 150 | $ 0.19 | |||
| 500 | $ 0.17 | |||
| 3000 | $ 0.16 | |||
| 6000 | $ 0.16 | |||
| Mouser Electronics | N/A | 1 | $ 0.60 | |
| 10 | $ 0.41 | |||
| 100 | $ 0.28 | |||
| 500 | $ 0.22 | |||
| 1000 | $ 0.20 | |||
| 3000 | $ 0.14 | |||
| 9000 | $ 0.13 | |||
| Texas Instruments | LARGE T&R | 1 | $ 0.29 | |
| 100 | $ 0.20 | |||
| 250 | $ 0.15 | |||
| 1000 | $ 0.10 | |||
CSD13306 Series
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm
| Part | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Vgs(th) (Max) @ Id | Vgs (Max) [Max] | Vgs (Max) [Min] | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | FET Type | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD13306W | 6-DSBGA (1x1.5) | 11.2 nC | Surface Mount | 1.3 V | 10 V | -10 V | 1.9 W | 12 V | 10.2 mOhm | 3.5 A | MOSFET (Metal Oxide) | 150 °C | -55 °C | 1370 pF | 6-UFBGA, DSBGA | N-Channel | 2.5 V, 4.5 V |
Texas Instruments CSD13306WT | 6-DSBGA (1x1.5) | 11.2 nC | Surface Mount | 1.3 V | 10 V | -10 V | 1.9 W | 12 V | 10.2 mOhm | 3.5 A | MOSFET (Metal Oxide) | 150 °C | -55 °C | 1370 pF | 6-UFBGA, DSBGA | N-Channel | 2.5 V, 4.5 V |
Description
General part information
CSD13306 Series
This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics and an ultra low profile.
This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics and an ultra low profile.
Documents
Technical documentation and resources