CSD13202Q2 Series
12-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 9.3 mOhm
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
12-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 9.3 mOhm
| Part | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) [Max] | Technology | Vgs(th) (Max) @ Id | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD13202Q2 | 8 V | 997 pF | 2.7 W | MOSFET (Metal Oxide) | 1.1 V | 150 °C | -55 °C | 6-WSON (2x2) | 12 V | 6.6 nC | Surface Mount | 22 A | 2.5 V, 4.5 V | 9.3 mOhm | N-Channel |
Key Features
• Ultra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 2-mm × 2-mm Plastic PackageUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 2-mm × 2-mm Plastic Package
Description
AI
This 12-V, 7.5-mΩ NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The SON 2 × 2 offers excellent thermal performance for the size of the package.
This 12-V, 7.5-mΩ NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The SON 2 × 2 offers excellent thermal performance for the size of the package.