CSD13302W Series
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 17.1 mOhm
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 17.1 mOhm
| Part | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | FET Type | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Vgs (Max) [Max] | Vgs (Max) [Min] | Technology | Rds On (Max) @ Id, Vgs | Supplier Device Package | Vgs(th) (Max) @ Id | Package / Case | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD13302WT | 12 V | 1.8 W | N-Channel | Surface Mount | 7.8 nC | 150 °C | -55 °C | 10 V | -10 V | MOSFET (Metal Oxide) | 17.1 mOhm | 4-DSBGA (1x1) | 1.3 V | 4-UFBGA, DSBGA | 1.6 A | 2.5 V, 4.5 V |
Key Features
• Ultra Low On ResistanceLow Qgand QgdSmall Footprint 1 mm × 1 mmLow Profile 0.62 mm HeightPb FreeRoHS CompliantHalogen FreeUltra Low On ResistanceLow Qgand QgdSmall Footprint 1 mm × 1 mmLow Profile 0.62 mm HeightPb FreeRoHS CompliantHalogen Free
Description
AI
This 14.6 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1 mm outline with excellent thermal characteristics and an ultra low profile.
This 14.6 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1 mm outline with excellent thermal characteristics and an ultra low profile.