CSD13302WT
Active12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1 MM, 17.1 MOHM 4-DSBGA -55 TO 150
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CSD13302WT
Active12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1 MM, 17.1 MOHM 4-DSBGA -55 TO 150
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | CSD13302WT | CSD13302 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.6 A | 1.6 A |
| Drain to Source Voltage (Vdss) | 12 V | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V, 4.5 V | 2.5 - 4.5 V |
| FET Type | N-Channel | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC | 7.8 nC |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | 4-UFBGA, DSBGA | 4-UFBGA, DSBGA |
| Power Dissipation (Max) [Max] | 1.8 W | 1.8 W |
| Rds On (Max) @ Id, Vgs | 17.1 mOhm | 17.1 mOhm |
| Supplier Device Package | 4-DSBGA (1x1) | 4-DSBGA (1x1) |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 10 V | 10 V |
| Vgs (Max) [Min] | -10 V | -10 V |
| Vgs(th) (Max) @ Id | 1.3 V | 1.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| DigiKey | N/A | 250 | $ 0.49 | |
| 500 | $ 0.45 | |||
| 750 | $ 0.42 | |||
| 1250 | $ 0.40 | |||
| 1750 | $ 0.39 | |||
| 2500 | $ 0.37 | |||
| 6250 | $ 0.35 | |||
| Digikey | Cut Tape (CT) | 1 | $ 0.94 | |
| 10 | $ 0.77 | |||
| 100 | $ 0.60 | |||
| Digi-Reel® | 1 | $ 0.94 | ||
| 10 | $ 0.77 | |||
| 100 | $ 0.60 | |||
| Tape & Reel (TR) | 250 | $ 0.59 | ||
| 500 | $ 0.51 | |||
| 1250 | $ 0.41 | |||
| 2500 | $ 0.39 | |||
| 6250 | $ 0.37 | |||
| 12500 | $ 0.35 | |||
| 25000 | $ 0.35 | |||
| Mouser Electronics | N/A | 1 | $ 1.18 | |
| 10 | $ 0.80 | |||
| 100 | $ 0.49 | |||
| 250 | $ 0.49 | |||
| 500 | $ 0.42 | |||
| 1000 | $ 0.39 | |||
| 2500 | $ 0.37 | |||
| 5000 | $ 0.35 | |||
| Rochester Electronics | N/A | 1 | $ 0.39 | |
| 25 | $ 0.38 | |||
| 100 | $ 0.37 | |||
| 500 | $ 0.35 | |||
| 1000 | $ 0.33 | |||
| TME | N/A | 1 | $ 0.82 | |
| 5 | $ 0.67 | |||
| 25 | $ 0.59 | |||
| 100 | $ 0.54 | |||
| 250 | $ 0.50 | |||
| Texas Instruments | SMALL T&R | 1 | $ 0.81 | |
| 100 | $ 0.55 | |||
| 250 | $ 0.42 | |||
| 1000 | $ 0.28 | |||
CSD13302 Series
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 17.1 mOhm
| Part | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | FET Type | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Vgs (Max) [Max] | Vgs (Max) [Min] | Technology | Rds On (Max) @ Id, Vgs | Supplier Device Package | Vgs(th) (Max) @ Id | Package / Case | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD13302WT | 12 V | 1.8 W | N-Channel | Surface Mount | 7.8 nC | 150 °C | -55 °C | 10 V | -10 V | MOSFET (Metal Oxide) | 17.1 mOhm | 4-DSBGA (1x1) | 1.3 V | 4-UFBGA, DSBGA | 1.6 A | 2.5 V, 4.5 V |
Texas Instruments CSD13302W | 12 V | 1.8 W | N-Channel | Surface Mount | 7.8 nC | 150 °C | -55 °C | 10 V | -10 V | MOSFET (Metal Oxide) | 17.1 mOhm | 4-DSBGA (1x1) | 1.3 V | 4-UFBGA, DSBGA | 1.6 A | 2.5 V, 4.5 V |
Description
General part information
CSD13302 Series
This 14.6 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1 mm outline with excellent thermal characteristics and an ultra low profile.
This 14.6 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1 mm outline with excellent thermal characteristics and an ultra low profile.
Documents
Technical documentation and resources