CSD13302W
Active12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1 MM, 17.1 MOHM 4-DSBGA
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CSD13302W
Active12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1 MM, 17.1 MOHM 4-DSBGA
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | CSD13302W | CSD13302 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.6 A | 1.6 A |
| Drain to Source Voltage (Vdss) | 12 V | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V, 4.5 V | 2.5 - 4.5 V |
| FET Type | N-Channel | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC | 7.8 nC |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | 4-UFBGA, DSBGA | 4-UFBGA, DSBGA |
| Power Dissipation (Max) [Max] | 1.8 W | 1.8 W |
| Rds On (Max) @ Id, Vgs | 17.1 mOhm | 17.1 mOhm |
| Supplier Device Package | 4-DSBGA (1x1) | 4-DSBGA (1x1) |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 10 V | 10 V |
| Vgs (Max) [Min] | -10 V | -10 V |
| Vgs(th) (Max) @ Id | 1.3 V | 1.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Arrow Electronics | Cut Strips | 1 | $ 0.17 | |
| 10 | $ 0.11 | |||
| 25 | $ 0.11 | |||
| 100 | $ 0.10 | |||
| 250 | $ 0.09 | |||
| 500 | $ 0.08 | |||
| 1000 | $ 0.07 | |||
| DigiKey | Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | 1 | $ 0.55 | |
| 10 | $ 0.34 | |||
| 100 | $ 0.22 | |||
| 500 | $ 0.16 | |||
| 1000 | $ 0.15 | |||
| 3000 | $ 0.11 | |||
| 6000 | $ 0.10 | |||
| 9000 | $ 0.10 | |||
| 15000 | $ 0.09 | |||
| 21000 | $ 0.09 | |||
| 30000 | $ 0.09 | |||
| Digikey | Cut Tape (CT) | 1 | $ 0.56 | |
| 10 | $ 0.34 | |||
| 100 | $ 0.22 | |||
| 500 | $ 0.16 | |||
| 1000 | $ 0.15 | |||
| Digi-Reel® | 1 | $ 0.56 | ||
| 10 | $ 0.34 | |||
| 100 | $ 0.22 | |||
| 500 | $ 0.16 | |||
| 1000 | $ 0.15 | |||
| Tape & Reel (TR) | 3000 | $ 0.12 | ||
| 6000 | $ 0.11 | |||
| 9000 | $ 0.11 | |||
| 15000 | $ 0.10 | |||
| 21000 | $ 0.10 | |||
| 30000 | $ 0.09 | |||
| 75000 | $ 0.09 | |||
| LCSC | N/A | 5 | $ 0.27 | |
| 50 | $ 0.22 | |||
| 150 | $ 0.19 | |||
| 500 | $ 0.16 | |||
| 3000 | $ 0.15 | |||
| 6000 | $ 0.14 | |||
| Mouser Electronics | N/A | 1 | $ 0.37 | |
| 10 | $ 0.24 | |||
| 100 | $ 0.13 | |||
| 1000 | $ 0.12 | |||
| 3000 | $ 0.10 | |||
| 9000 | $ 0.09 | |||
| 24000 | $ 0.09 | |||
| Rochester Electronics | N/A | 1 | $ 0.10 | |
| 25 | $ 0.10 | |||
| 100 | $ 0.09 | |||
| 500 | $ 0.09 | |||
| 1000 | $ 0.08 | |||
| Verical | N/A | 57 | $ 0.11 | |
| 100 | $ 0.10 | |||
| 250 | $ 0.09 | |||
| 500 | $ 0.08 | |||
| 1000 | $ 0.07 | |||
CSD13302 Series
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 17.1 mOhm
| Part | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | FET Type | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Vgs (Max) [Max] | Vgs (Max) [Min] | Technology | Rds On (Max) @ Id, Vgs | Supplier Device Package | Vgs(th) (Max) @ Id | Package / Case | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD13302WT | 12 V | 1.8 W | N-Channel | Surface Mount | 7.8 nC | 150 °C | -55 °C | 10 V | -10 V | MOSFET (Metal Oxide) | 17.1 mOhm | 4-DSBGA (1x1) | 1.3 V | 4-UFBGA, DSBGA | 1.6 A | 2.5 V, 4.5 V |
Texas Instruments CSD13302W | 12 V | 1.8 W | N-Channel | Surface Mount | 7.8 nC | 150 °C | -55 °C | 10 V | -10 V | MOSFET (Metal Oxide) | 17.1 mOhm | 4-DSBGA (1x1) | 1.3 V | 4-UFBGA, DSBGA | 1.6 A | 2.5 V, 4.5 V |
Description
General part information
CSD13302 Series
This 14.6 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1 mm outline with excellent thermal characteristics and an ultra low profile.
This 14.6 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1 mm outline with excellent thermal characteristics and an ultra low profile.
Documents
Technical documentation and resources