CSD13201W10 Series
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 34 mOhm
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 34 mOhm
| Part | Mounting Type | Vgs(th) (Max) @ Id | Supplier Device Package | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | FET Type | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD13201W10 | Surface Mount | 1.1 V | 4-DSBGA (1x1) | 4-UFBGA, DSBGA | 1.8 V, 4.5 V | 8 V | 462 pF | MOSFET (Metal Oxide) | 2.9 nC | 34 mOhm | 1.6 A | 12 V | 1.2 W | N-Channel | 150 °C | -55 °C |
Key Features
• Ultra-Low Qgand QgdSmall Footprint (1 mm × 1 mm)Low Profile 0.62-mm HeightPb-FreeRoHS CompliantHalogen-FreeGate-Source Voltage ClampUltra-Low Qgand QgdSmall Footprint (1 mm × 1 mm)Low Profile 0.62-mm HeightPb-FreeRoHS CompliantHalogen-FreeGate-Source Voltage Clamp
Description
AI
This 12-V, 26-mΩ, N-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.
This 12-V, 26-mΩ, N-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.