CSD13201W10
Active12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1 MM, 34 MOHM
Deep-Dive with AI
Search across all available documentation for this part.
CSD13201W10
Active12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1 MM, 34 MOHM
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD13201W10 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.6 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2.9 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 462 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 4-UFBGA, DSBGA |
| Power Dissipation (Max) [Max] | 1.2 W |
| Rds On (Max) @ Id, Vgs [Max] | 34 mOhm |
| Supplier Device Package | 4-DSBGA (1x1) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.48 | |
| 10 | $ 0.37 | |||
| 100 | $ 0.22 | |||
| 500 | $ 0.21 | |||
| 1000 | $ 0.14 | |||
| Digi-Reel® | 1 | $ 0.48 | ||
| 10 | $ 0.37 | |||
| 100 | $ 0.22 | |||
| 500 | $ 0.21 | |||
| 1000 | $ 0.14 | |||
| Tape & Reel (TR) | 3000 | $ 0.13 | ||
| 6000 | $ 0.12 | |||
| 9000 | $ 0.11 | |||
| 30000 | $ 0.11 | |||
| 75000 | $ 0.10 | |||
| Texas Instruments | LARGE T&R | 1 | $ 0.20 | |
| 100 | $ 0.14 | |||
| 250 | $ 0.11 | |||
| 1000 | $ 0.07 | |||
CSD13201 Series
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 34 mOhm
| Part | Mounting Type | Vgs(th) (Max) @ Id | Supplier Device Package | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | FET Type | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD13201W10 | Surface Mount | 1.1 V | 4-DSBGA (1x1) | 4-UFBGA, DSBGA | 1.8 V, 4.5 V | 8 V | 462 pF | MOSFET (Metal Oxide) | 2.9 nC | 34 mOhm | 1.6 A | 12 V | 1.2 W | N-Channel | 150 °C | -55 °C |
Description
General part information
CSD13201 Series
This 12-V, 26-mΩ, N-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.
This 12-V, 26-mΩ, N-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.
Documents
Technical documentation and resources