CSD13381 Series

12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 180 mOhm, gate ESD protection

Link to Manufacturer Page: https://www.ti.com/

Catalog

12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 180 mOhm, gate ESD protection

Part	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max) [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	FET Type
Texas Instruments CSD13381F4	Surface Mount	3-XFDFN	2.1 A	3-PICOSTAR	1.1 V	200 pF	MOSFET (Metal Oxide)	150 °C	-55 °C	1.4 nC	180 mOhm	8 V	12 V	1.8 V, 4.5 V	500 mW	N-Channel

Key Features

• Low on-resistanceLow Qgand QgdLow threshold voltageUltra-small footprint (0402 case size)1.0 mm × 0.6 mmUltra-low profileMaximum height: 0.36-mmIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliantLow on-resistanceLow Qgand QgdLow threshold voltageUltra-small footprint (0402 case size)1.0 mm × 0.6 mmUltra-low profileMaximum height: 0.36-mmIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliant

Description

This 140-mΩ, 12-V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. This 140-mΩ, 12-V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.