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STMicroelectronics

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(2458)

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Part	Values	Type	Height [z]	Height [z]	Technology	Mounting Type	Package / Case	ESD Protection	Number of Channels [custom]	Filter Order	Resistance - Channel (Ohms)	Applications	Operating Temperature [Min]	Operating Temperature [Max]	Size / Dimension [x]	Size / Dimension [y]	Size / Dimension [x]	Size / Dimension [y]	Peripherals	Core Processor	Program Memory Type	Speed	Voltage - Supply (Vcc/Vdd) [Max]	Voltage - Supply (Vcc/Vdd) [Min]	Core Size	Connectivity	Program Memory Size	Number of I/O	Supplier Device Package	Oscillator Type	Data Converters [custom]	Data Converters [custom]	RAM Size	Grade	Qualification	Utilized IC / Part	Supplied Contents	Board Type	Amplifier Type	Channels per IC	Voltage Dropout (Max) [Max]	Control Features	Voltage - Input (Max) [Max]	Current - Output	Number of Regulators	Current - Supply (Max) [Max]	Output Configuration	Protection Features	Output Type	PSRR [Max]	PSRR [Min]	For Use With/Related Products	Frequency [Max]	Frequency [Min]	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Fault Protection	Number of Outputs	Input Type	Output Type	Current - Output (Max) [Max]	Ratio - Input:Output [custom]	Switch Type	Voltage - Load	Rds On (Typ)	Interface	Voltage - Supply (Vcc/Vdd)
STMicroelectronics EMIF09-SD01F3	20 pF 40 Ohms	Low Pass	0.026 in	0.65 mm	RC (Pi)	Surface Mount	24-WFBGA FCBGA		9	2nd	40 Ohms	General Purpose	-30 ░C	85 °C	0.076 in	1.92 mm	1.92 mm	0.076 in
STMicroelectronics STM32F412ZGJ7						Surface Mount	144-UFBGA						-40 °C	105 °C					Brown-out Detect/Reset DMA I2S LCD POR PWM WDT	ARM® Cortex®-M4	FLASH	100 MHz	3.6 V	1.7 V	32-Bit Single-Core	CANbus EBI/EMI I2C IrDA LINbus MMC/SD/SDIO QSPI SPI UART/USART USB USB OTG	1 MB	114	144-UFBGA (10x10)	Internal	16	12 b	256 K
STMicroelectronics SPC560D40L1B3E0X						Surface Mount	64-LQFP						-40 °C	105 °C					DMA LVD POR PWM WDT	e200z0h	FLASH	32 MHz	5.5 V	3 V	32-Bit Single-Core	CANbus LINbus SPI UART/USART	256 KB	45	64-LQFP (10x10)	Internal	16	12 b	16 K	Automotive	AEC-Q100
STMicroelectronics SPC560D30L1B4E0X						Surface Mount	64-LQFP						-40 °C	105 °C					DMA LVD POR PWM WDT	e200z0h	FLASH	48 MHz	5.5 V	3 V	32-Bit Single-Core	CANbus LINbus SPI UART/USART	128 KB	45	64-LQFP (10x10)	Internal	16	12 b	12 K	Automotive	AEC-Q100
STMicroelectronics STEVAL-CCA036V1																																				8-SOIC Package	Board(s)	Bare (Unpopulated)	General Purpose	1 - Single
STMicroelectronics LDLN025J30R						Surface Mount	4-XFBGA FCBGA						-40 °C	125 ¯C															4-FlipChip (0.63x0.63)												0.2 V	Enable	5.5 V	250 mA	1	425 µA	Positive	Over Current Over Temperature Short Circuit Soft Start	1.81 mOhm	80 dB	60 dB
STMicroelectronics ST25RU3993-EVAL		RFID Reader																																			Board(s)															ST25RU3993	960 MHz	840 MHz
STMicroelectronics STM32F401CBY6TT						Surface Mount	49-UFBGA WLCSP						-40 °C	85 °C					Brown-out Detect/Reset DMA I2S POR PWM WDT	ARM® Cortex®-M4	FLASH	84 MHz	3.6 V	1.7 V	32-Bit Single-Core	I2C IrDA LINbus SDIO SPI UART/USART USB OTG	128 KB	36	49-WLCSP	Internal			64 K
STMicroelectronics STP12NM60N					MOSFET (Metal Oxide)	Through Hole	TO-220-3						-55 °C	150 °C															TO-220																										25 V	N-Channel	960 pF	10 A	4 V	600 V	90 W	30.5 nC	410 mOhm	10 V
STMicroelectronics VND1NV04						Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3						-40 °C	150 °C															DPAK																		Low Side																		Current Limiting (Fixed) Over Temperature Over Voltage	1	Non-Inverting	N-Channel	1.7 A	1:1	General Purpose	36 V	250 mOhm	On/Off

Series	Category	# Parts	Status	Description

STMicroelectronicsSTB15N	Discrete Semiconductor Products	3	8
STMicroelectronicsSTB160N75F3N-channel 75 V, 3.2 mOhm typ., 120 A STripFET F3 Power MOSFET in D2PAK package	FETs, MOSFETs	1	1	This N-channel enhancement mode Power MOSFET is the latest refinement of ST’s STripFET™ process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge.
STMicroelectronicsSTB16N	Discrete Semiconductor Products	2	8
STMicroelectronicsSTB16P	Discrete Semiconductor Products	1	8
STMicroelectronicsSTB180N	FETs, MOSFETs	1	8
STMicroelectronicsSTB18N60DM2N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package	FETs, MOSFETs	2	1	The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as... Read More
STMicroelectronicsSTB19NF20N-channel 200 V, 0.11 Ohm typ., 15 A MESH OVERLAY Power MOSFET in D2PAK package	Single FETs, MOSFETs	1	1	These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
STMicroelectronicsSTB200N	Single FETs, MOSFETs	2	8
STMicroelectronicsSTB20N	Transistors	1	8
STMicroelectronicsSTB20N90K5N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a D2PAK package	FETs, MOSFETs	1	1	This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.