STB18N60DM2 Series

N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package

Catalog

N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	FET Type	Technology	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [x]	Operating Temperature
STMicroelectronics STB18N60M6	10 V	650 pF	13 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	N-Channel	MOSFET (Metal Oxide)	4.75 V	25 V	TO-263 (D2PAK)	600 V	16.8 nC	110 W	280 mOhm	-55 °C	150 °C
STMicroelectronics STB18N60DM2	10 V	800 pF	12 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	N-Channel	MOSFET (Metal Oxide)	5 V	25 V	TO-263 (D2PAK)	600 V			295 mOhm			90 W	20 nC	150 °C

Catalog

N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package

Description

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.