STB18N65M5

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STMicroelectronics

N-CHANNEL 650 V, 198 OHM TYP., 15 A MDMESH M5 POWER MOSFET IN A D2PAK PACKAGE

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STB18N65M5

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STMicroelectronics

N-CHANNEL 650 V, 198 OHM TYP., 15 A MDMESH M5 POWER MOSFET IN A D2PAK PACKAGE

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Description Specifications Series Pricing CAD Documents

Description

General part information

STB18 Series

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Technical Specifications

Parameters and characteristics for this part

Specification	STB18N65M5

Current - Continuous Drain (Id) (Tc)	15 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	31 nC
Input Capacitance (Ciss) (Max)	1240 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	110 W
Rds On (Max)	220 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	5 V

STB18 Series

N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package

Part	Vgs (Max)	Package / Case	Rds On (Max)	Package Name	Power Dissipation (Max)	Technology	Mounting Type	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	FET Type	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)
STMicroelectronics STB18N65M5	25 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	220 mOhm	TO-263 (D2PAK)	110 W	MOSFET (Metal Oxide)	Surface Mount	5 V	10 V	150 °C	N-Channel	1240 pF	31 nC	650 V	15 A
STMicroelectronics STB18N60M6	25 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	280 mOhm	TO-263 (D2PAK)	110 W	MOSFET (Metal Oxide)	Surface Mount	4.75 V	10 V		N-Channel	650 pF	16.8 nC	600 V	13 A	-55 °C	150 °C
STMicroelectronics STB18N60DM2	25 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	295 mOhm 295 mOhm	TO-263 (D2PAK)	90 W	MOSFET (Metal Oxide)	Surface Mount	5 V	10 V	150 °C	N-Channel	800 pF	20 nC	600 V	12 A

Pricing

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CAD

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Documents

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