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STB18N60DM2 - STMICROELECTRONICS STB11N65M5

STB18N60DM2

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STMicroelectronics

N-CHANNEL 600 V, 0.260 OHM TYP., 12 A MDMESH DM2 POWER MOSFET IN A D2PAK PACKAGE

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STB18N60DM2 - STMICROELECTRONICS STB11N65M5

STB18N60DM2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.260 OHM TYP., 12 A MDMESH DM2 POWER MOSFET IN A D2PAK PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB18N60DM2
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [x]20 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]800 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)90 W
Rds On (Max) @ Id, Vgs295 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.97
10$ 2.16
100$ 1.51
500$ 1.31
Digi-Reel® 1$ 2.97
10$ 2.16
100$ 1.51
500$ 1.31
Tape & Reel (TR) 1000$ 1.12
2000$ 1.07
3000$ 1.07
NewarkEach (Supplied on Cut Tape) 1$ 3.64
10$ 2.65
25$ 2.45
50$ 2.26
100$ 2.06
250$ 1.93
500$ 1.80
1000$ 1.71

Description

General part information

STB18N60DM2 Series

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.