STB160N75F3 Series

N-channel 75 V, 3.2 mOhm typ., 120 A STripFET F3 Power MOSFET in D2PAK package

Catalog

N-channel 75 V, 3.2 mOhm typ., 120 A STripFET F3 Power MOSFET in D2PAK package

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STB160N75F3	4 mOhm	120 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	75 V	D2PAK	85 nC	20 V	Surface Mount	10 V	4 V	330 W	-55 °C	175 ░C	N-Channel	6750 pF

Catalog

N-channel 75 V, 3.2 mOhm typ., 120 A STripFET F3 Power MOSFET in D2PAK package

Description

This N-channel enhancement mode Power MOSFET is the latest refinement of ST’s STripFET™ process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge.