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STB160N75F3 - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STB160N75F3

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STMicroelectronics

N-CHANNEL 75 V, 3.2 MOHM TYP., 120 A STRIPFET F3 POWER MOSFET IN D2PAK PACKAGE

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STB160N75F3 - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STB160N75F3

Active
STMicroelectronics

N-CHANNEL 75 V, 3.2 MOHM TYP., 120 A STRIPFET F3 POWER MOSFET IN D2PAK PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB160N75F3
Current - Continuous Drain (Id) @ 25°C120 A
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs85 nC
Input Capacitance (Ciss) (Max) @ Vds6750 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)330 W
Rds On (Max) @ Id, Vgs4 mOhm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.90
10$ 4.11
100$ 3.33
500$ 2.96
Digi-Reel® 1$ 4.90
10$ 4.11
100$ 3.33
500$ 2.96
Tape & Reel (TR) 1000$ 2.53
2000$ 2.38

Description

General part information

STB160N75F3 Series

This N-channel enhancement mode Power MOSFET is the latest refinement of ST’s STripFET™ process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge.