STB19NF20 Series

N-channel 200 V, 0.11 Ohm typ., 15 A MESH OVERLAY Power MOSFET in D2PAK package

Catalog

N-channel 200 V, 0.11 Ohm typ., 15 A MESH OVERLAY Power MOSFET in D2PAK package

Part	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type
STMicroelectronics STB19NF20	800 pF	D2PAK	4 V	-55 °C	150 °C	160 mOhm	90 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	15 A	200 V	MOSFET (Metal Oxide)	24 nC	10 V	N-Channel	Surface Mount

Catalog

N-channel 200 V, 0.11 Ohm typ., 15 A MESH OVERLAY Power MOSFET in D2PAK package

Description

These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.