Beta
⌘K
MOSFET N-CH 600V 20A I2PAK
| Part | Technology | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | FET Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Vgs (Max) | Operating Temperature | Package / Case | Mounting Type | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | MOSFET (Metal Oxide) | 192 W | 290 mOhm | N-Channel | 600 V | 5 V | 30 V | 150 °C | I2PAK TO-262-3 Long Leads TO-262AA | Through Hole | I2PAK | 20 A | 54 nC | 10 V | 1500 pF |