STB20NM60-1

Obsolete

STMicroelectronics

MOSFET N-CH 600V 20A I2PAK

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Obsolete

STMicroelectronics

MOSFET N-CH 600V 20A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STB20NM60-1

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC
Input Capacitance (Ciss) (Max) @ Vds	1500 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	192 W
Rds On (Max) @ Id, Vgs	290 mOhm
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature	Package / Case	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STB20NM60-1	MOSFET (Metal Oxide)	192 W	290 mOhm	N-Channel	600 V	5 V	30 V	150 °C	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	I2PAK	20 A	54 nC	10 V	1500 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 20A (Tc) 192W (Tc) Through Hole I2PAK

Technical documentation and resources