STB20N90K5 Series

N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a D2PAK package

Catalog

N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a D2PAK package

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STB20N90K5	TO-263 (D2PAK)	5 V	250 mOhm	900 V	Surface Mount	250 W	1500 pF	MOSFET (Metal Oxide)	20 A	-55 °C	150 °C	30 V	N-Channel	40 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V

Catalog

N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a D2PAK package

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.