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STB20N90K5 - D2Pak

STB20N90K5

Active
STMicroelectronics

N-CHANNEL 900 V, 0.21 OHM TYP., 20 A MDMESH K5 POWER MOSFET IN A D2PAK PACKAGE

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DocumentsDatasheet+15
STB20N90K5 - D2Pak

STB20N90K5

Active
STMicroelectronics

N-CHANNEL 900 V, 0.21 OHM TYP., 20 A MDMESH K5 POWER MOSFET IN A D2PAK PACKAGE

Deep-Dive with AI

DocumentsDatasheet+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB20N90K5
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)900 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]40 nC
Input Capacitance (Ciss) (Max) @ Vds1500 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]250 W
Rds On (Max) @ Id, Vgs [Max]250 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.22
10$ 5.33
100$ 4.44
500$ 3.92
Digi-Reel® 1$ 6.22
10$ 5.33
100$ 4.44
500$ 3.92
Tape & Reel (TR) 1000$ 3.53
2000$ 3.30

Description

General part information

STB20N90K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.