MOSFET N-CH 650V 12A D2PAK
| Part | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Supplier Device Package | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | FET Type | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Technology | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 12 A | 150 W | D2PAK | 650 V | 270 mOhm | -55 °C | 150 °C | Surface Mount | N-Channel | 55 nC | 25 V | 1900 pF | MOSFET (Metal Oxide) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | 4 V | |
STMicroelectronics | 14 A | 125 W | D2PAK | 600 V | 299 mOhm | -55 °C | 150 °C | Surface Mount | N-Channel | 25 V | MOSFET (Metal Oxide) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | 4 V | 1250 pF | ||
STMicroelectronics | 14 A | D2PAK | 500 V | 340 mOhm | -50 °C | 150 °C | Surface Mount | N-Channel | 106 nC | 30 V | 2260 pF | MOSFET (Metal Oxide) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | 4.5 V |