STP12NM60N
ObsoleteSTMicroelectronics
MOSFET N-CH 600V 10A TO220AB
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STP12NM60N
ObsoleteSTMicroelectronics
MOSFET N-CH 600V 10A TO220AB
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STP12NM60N |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 30.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 90 W |
| Rds On (Max) @ Id, Vgs | 410 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
STP12NM60N
N-Channel 600 V 10A (Tc) 90W (Tc) Through Hole TO-220
Documents
Technical documentation and resources