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Texas Instruments

Texas Instruments

Texas Instruments Incorporated (TI) is a global semiconductor design and manufacturing company that develops analog ICs and embedded processors. By employing the worlds brightest minds, TI creates innovations that shape the future of technology. TI is helping more than 100,000 customers transform the future, today.

Series List(22504)

SeriesCategory# PartsStatusDescription
Texas InstrumentsCSD17304Q330-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 8.8 mOhm
Discrete Semiconductor Products11
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
Texas InstrumentsCSD1730530-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.6 mOhm
Discrete Semiconductor Products11
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
Texas InstrumentsCSD17305Q5A30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.6 mOhm
Discrete Semiconductor Products11
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
Texas InstrumentsCSD1730630-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.2 mOhm
Single FETs, MOSFETs11
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
Texas InstrumentsCSD17306Q5A30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.2 mOhm
Single FETs, MOSFETs11
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
Texas InstrumentsCSD1730730-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 12.1 mOhm
FETs, MOSFETs11
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
Texas InstrumentsCSD17307Q5A30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 12.1 mOhm
FETs, MOSFETs11
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
Texas InstrumentsCSD1730830-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 11.8 mOhm
Single FETs, MOSFETs21
This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and... Read More
Texas InstrumentsCSD17308Q330-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 11.8 mOhm
Single FETs, MOSFETs21
This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and... Read More
Texas InstrumentsCSD1730930-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.3 mOhm
FETs, MOSFETs11
This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications. This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.
Texas InstrumentsCSD17309Q330-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.3 mOhm
FETs, MOSFETs11
This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications. This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.
Texas InstrumentsCSD1731030-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.9 mOhm
Discrete Semiconductor Products11
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
Texas InstrumentsCSD17310Q5A30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.9 mOhm
Discrete Semiconductor Products11
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
Texas InstrumentsCSD1731130-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm
Transistors11
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
Texas InstrumentsCSD17311Q530-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm
Transistors11
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
Texas InstrumentsCSD1731230-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.7 mOhm
Single FETs, MOSFETs11
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
Texas InstrumentsCSD17312Q530-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.7 mOhm
Single FETs, MOSFETs11
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
Texas InstrumentsCSD17313Q230-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 32 mOhm
Single FETs, MOSFETs110
This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package. This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™ power... Read More
Texas InstrumentsCSD17313Q2Q1Automotive 30-V N channel NexFET™ power MOSFET
FETs, MOSFETs110
This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and is optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package. This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™... Read More
Texas InstrumentsCSD1731830-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 16.9 mOhm
Discrete Semiconductor Products210
This 30V, 12.6mΩ, 2mm × 2mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The 2mm × 2mm SON offers excellent thermal performance for the size of the package. This 30V, 12.6mΩ, 2mm × 2mm SON NexFET™ power... Read More