CSD17311 Series
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm
| Part | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Package / Case | Vgs(th) (Max) @ Id | Vgs (Max) | Supplier Device Package | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) [Max] | FET Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD17311Q5 | 31 nC | Surface Mount | 8-PowerTDFN | 1.6 V | -8 V, 10 V | 8-VSON-CLIP (5x6) | 2 mOhm | 3.2 W | N-Channel | MOSFET (Metal Oxide) | 3 V, 8 V | 150 °C | -55 °C | 30 V | 4280 pF | 32 A, 100 A |
Key Features
• Optimized for 5V Gate DriveUltra Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageAPPLICATIONSNotebook Point-of-LoadPoint-of-Load Synchronous Buck in Networking, Telecom and Computing SystemsNexFET is a trademark of Texas Instruments.Optimized for 5V Gate DriveUltra Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageAPPLICATIONSNotebook Point-of-LoadPoint-of-Load Synchronous Buck in Networking, Telecom and Computing SystemsNexFET is a trademark of Texas Instruments.
Description
AI
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.