CSD17310Q5A Series
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.9 mOhm
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.9 mOhm
| Part | Vgs(th) (Max) @ Id [Max] | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs [Max] | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD17310Q5A | 1.8 V | -8 V, 10 V | 1560 pF | 11.6 nC | MOSFET (Metal Oxide) | 150 °C | -55 °C | 21 A, 100 A | 30 V | 3.1 W | N-Channel | 3 V, 8 V | 5.1 mOhm | Surface Mount | 8-PowerTDFN | 8-VSONP (5x6) |
Key Features
• Optimized for 5V Gate DriveUltralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageAPPLICATIONSNotebook Point of LoadPoint-of-Load Synchronous Buck in Networking, Telecom and Computing SystemsOptimized for Synchronous FET ApplicationsOptimized for 5V Gate DriveUltralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageAPPLICATIONSNotebook Point of LoadPoint-of-Load Synchronous Buck in Networking, Telecom and Computing SystemsOptimized for Synchronous FET Applications
Description
AI
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.