CSD17310Q5A
Active30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 5.9 MOHM 8-VSONP -55 TO 150
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CSD17310Q5A
Active30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 5.9 MOHM 8-VSONP -55 TO 150
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Technical Specifications
Parameters and characteristics for this part
| Specification | CSD17310Q5A |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 21 A, 100 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 3 V, 8 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11.6 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1560 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 3.1 W |
| Rds On (Max) @ Id, Vgs [Max] | 5.1 mOhm |
| Supplier Device Package | 8-VSONP (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 10 V, -8 V |
| Vgs(th) (Max) @ Id [Max] | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Arrow Electronics | N/A | 1 | $ 0.38 | |
| 10 | $ 0.36 | |||
| 25 | $ 0.36 | |||
| 100 | $ 0.36 | |||
| 250 | $ 0.36 | |||
| 500 | $ 0.36 | |||
| 1000 | $ 0.36 | |||
| Chip1Stop | N/A | 1 | $ 0.24 | |
| DigiKey | N/A | 1 | $ 1.47 | |
| 10 | $ 0.93 | |||
| 100 | $ 0.62 | |||
| 500 | $ 0.48 | |||
| 756 | $ 0.40 | |||
| 1000 | $ 0.44 | |||
| 2500 | $ 0.36 | |||
| 5000 | $ 0.34 | |||
| Digikey | Cut Tape (CT) | 1 | $ 0.92 | |
| 10 | $ 0.75 | |||
| 100 | $ 0.58 | |||
| 500 | $ 0.49 | |||
| 1000 | $ 0.40 | |||
| Digi-Reel® | 1 | $ 0.92 | ||
| 10 | $ 0.75 | |||
| 100 | $ 0.58 | |||
| 500 | $ 0.49 | |||
| 1000 | $ 0.40 | |||
| Tape & Reel (TR) | 2500 | $ 0.38 | ||
| 5000 | $ 0.36 | |||
| 12500 | $ 0.34 | |||
| 25000 | $ 0.34 | |||
| Farnell | N/A | 1 | $ 1.07 | |
| 10 | $ 0.82 | |||
| 100 | $ 0.58 | |||
| 100 | $ 0.58 | |||
| 500 | $ 0.57 | |||
| 500 | $ 0.57 | |||
| 1000 | $ 0.56 | |||
| 1000 | $ 0.56 | |||
| 5000 | $ 0.55 | |||
| 5000 | $ 0.55 | |||
| LCSC | N/A | 1 | $ 0.90 | |
| 10 | $ 0.75 | |||
| 30 | $ 0.67 | |||
| 100 | $ 0.57 | |||
| 500 | $ 0.53 | |||
| 1000 | $ 0.51 | |||
| Mouser Electronics | N/A | 1 | $ 0.74 | |
| 10 | $ 0.56 | |||
| 100 | $ 0.45 | |||
| 500 | $ 0.40 | |||
| 1000 | $ 0.38 | |||
| 2500 | $ 0.36 | |||
| 5000 | $ 0.34 | |||
| Rochester Electronics | N/A | 1 | $ 0.38 | |
| 25 | $ 0.37 | |||
| 100 | $ 0.36 | |||
| 500 | $ 0.34 | |||
| 1000 | $ 0.32 | |||
| Texas Instruments | LARGE T&R | 1 | $ 0.68 | |
| 100 | $ 0.52 | |||
| 250 | $ 0.39 | |||
| 1000 | $ 0.28 | |||
| Verical | N/A | 17 | $ 0.36 | |
| 25 | $ 0.36 | |||
| 100 | $ 0.36 | |||
| 250 | $ 0.36 | |||
| 500 | $ 0.36 | |||
| 873 | $ 0.43 | |||
| 1000 | $ 0.41 | |||
| 1000 | $ 0.36 | |||
CSD17310Q5A Series
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.9 mOhm
| Part | Vgs(th) (Max) @ Id [Max] | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs [Max] | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD17310Q5A | 1.8 V | -8 V, 10 V | 1560 pF | 11.6 nC | MOSFET (Metal Oxide) | 150 °C | -55 °C | 21 A, 100 A | 30 V | 3.1 W | N-Channel | 3 V, 8 V | 5.1 mOhm | Surface Mount | 8-PowerTDFN | 8-VSONP (5x6) |
Description
General part information
CSD17310Q5A Series
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
Documents
Technical documentation and resources