CSD17309 Series
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.3 mOhm
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.3 mOhm
| Part | Mounting Type | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id [Max] | Supplier Device Package | Vgs (Max) | Package / Case | FET Type | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD17309Q3 | Surface Mount | MOSFET (Metal Oxide) | 1440 pF | 1.7 V | 8-VSON-CLIP (3.3x3.3) | -8 V, 10 V | 8-PowerTDFN | N-Channel | 20 A, 60 A | 150 °C | -55 °C | 30 V | 10 nC | 2.8 W | 3 V, 8 V | 5.4 mOhm |
Key Features
• Optimized for 5 V Gate DriveUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3 mm × 3.3 mm Plastic PackageAPPLICATIONSNotebook Point of LoadPoint of Load Synchronous Buck inNetworking, Telecom, and ComputingSystemsNexFET Is a trademark of Texas InstrumentsOptimized for 5 V Gate DriveUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3 mm × 3.3 mm Plastic PackageAPPLICATIONSNotebook Point of LoadPoint of Load Synchronous Buck inNetworking, Telecom, and ComputingSystemsNexFET Is a trademark of Texas Instruments
Description
AI
This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.
This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.