CSD17306Q5A Series
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.2 mOhm
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.2 mOhm
| Part | Mounting Type | Supplier Device Package | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) | Drain to Source Voltage (Vdss) | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD17306Q5A | Surface Mount | 8-VSONP (5x6) | MOSFET (Metal Oxide) | 24 A, 100 A | 1.6 V | 3.7 mOhm | 3 V, 8 V | 15.3 nC | N-Channel | 2170 pF | -8 V, 10 V | 30 V | 8-PowerTDFN | 150 °C | -55 °C | 3.2 W |
Key Features
• Optimized for 5V Gate DriveUltralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageAPPLICATIONSNotebook Point of LoadPoint-of-Load Synchronous Buck in Networking, Telecom and Computing SystemsOptimized for 5V Gate DriveUltralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageAPPLICATIONSNotebook Point of LoadPoint-of-Load Synchronous Buck in Networking, Telecom and Computing Systems
Description
AI
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.