CSD17308Q3 Series
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 11.8 mOhm
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 11.8 mOhm
| Part | Rds On (Max) @ Id, Vgs [Max] | Package / Case | Mounting Type | Vgs (Max) | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | FET Type | Vgs(th) (Max) @ Id [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD17308Q3 | 10.3 mOhm | 8-PowerTDFN | Surface Mount | -8 V, 10 V | 2.7 W | 30 V | 14 A, 44 A | 3 V, 8 V | 8-VSON-CLIP (3.3x3.3) | 150 °C | -55 °C | N-Channel | 1.8 V | 700 pF | MOSFET (Metal Oxide) | |
Texas Instruments CSD17308Q3T | 10.3 mOhm | 8-PowerTDFN | Surface Mount | -8 V, 10 V | 30 V | 14 A, 44 A | 3 V, 8 V | 8-VSON-CLIP (3.3x3.3) | 150 °C | -55 °C | N-Channel | 1.8 V | 700 pF | MOSFET (Metal Oxide) | 2.7 W, 28 W |
Key Features
• Optimized for 5-V gate driveUltra-low Qgand QgdLow thermal resistanceAvalanche ratedLead-free terminal platingRoHS compliantHalogen freeVSON 3.3 mm × 3.3 mm plastic packageOptimized for 5-V gate driveUltra-low Qgand QgdLow thermal resistanceAvalanche ratedLead-free terminal platingRoHS compliantHalogen freeVSON 3.3 mm × 3.3 mm plastic package
Description
AI
This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.
This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.