CSD17308Q3T
Active30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 11.8 MOHM
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CSD17308Q3T
Active30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 11.8 MOHM
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | CSD17308Q3T | CSD17308Q3 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 44 A, 14 A | 14 - 44 A |
| Drain to Source Voltage (Vdss) | 30 V | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 3 V, 8 V | 3 - 8 V |
| FET Type | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 700 pF | 700 pF |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN |
| Power Dissipation (Max) | 2.7 W, 28 W | 2.7 - 28 W |
| Power Dissipation (Max) | - | 2.7 W |
| Rds On (Max) @ Id, Vgs [Max] | 10.3 mOhm | 10.3 mOhm |
| Supplier Device Package | 8-VSON-CLIP (3.3x3.3) | 8-VSON-CLIP (3.3x3.3) |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 10 V, -8 V | -8 - 10 V |
| Vgs(th) (Max) @ Id [Max] | 1.8 V | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.01 | |
| 10 | $ 0.83 | |||
| 100 | $ 0.64 | |||
| Digi-Reel® | 1 | $ 1.01 | ||
| 10 | $ 0.83 | |||
| 100 | $ 0.64 | |||
| Tape & Reel (TR) | 250 | $ 0.64 | ||
| 500 | $ 0.54 | |||
| 1250 | $ 0.44 | |||
| 2500 | $ 0.42 | |||
| 6250 | $ 0.40 | |||
| 12500 | $ 0.38 | |||
| 25000 | $ 0.38 | |||
| Texas Instruments | SMALL T&R | 1 | $ 0.75 | |
| 100 | $ 0.58 | |||
| 250 | $ 0.42 | |||
| 1000 | $ 0.30 | |||
CSD17308Q3 Series
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 11.8 mOhm
| Part | Rds On (Max) @ Id, Vgs [Max] | Package / Case | Mounting Type | Vgs (Max) | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | FET Type | Vgs(th) (Max) @ Id [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD17308Q3 | 10.3 mOhm | 8-PowerTDFN | Surface Mount | -8 V, 10 V | 2.7 W | 30 V | 14 A, 44 A | 3 V, 8 V | 8-VSON-CLIP (3.3x3.3) | 150 °C | -55 °C | N-Channel | 1.8 V | 700 pF | MOSFET (Metal Oxide) | |
Texas Instruments CSD17308Q3T | 10.3 mOhm | 8-PowerTDFN | Surface Mount | -8 V, 10 V | 30 V | 14 A, 44 A | 3 V, 8 V | 8-VSON-CLIP (3.3x3.3) | 150 °C | -55 °C | N-Channel | 1.8 V | 700 pF | MOSFET (Metal Oxide) | 2.7 W, 28 W |
Description
General part information
CSD17308Q3 Series
This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.
This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.
Documents
Technical documentation and resources