CSD17313Q2 Series
30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 32 mOhm
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 32 mOhm
| Part | Vgs(th) (Max) @ Id [Max] | Supplier Device Package | Drain to Source Voltage (Vdss) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | FET Type | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs [Max] | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD17313Q2T | 1.8 V | 6-WSON (2x2) | 30 V | -8 V, 10 V | 2.7 nC | Surface Mount | N-Channel | 150 °C | -55 °C | 2.4 W, 17 W | 5 A | 3 V, 8 V | 340 pF | 30 mOhm | MOSFET (Metal Oxide) |
Key Features
• Optimized for 5-V Gate DriveUltra-Low Qgand QgdLow Thermal ResistancePb-FreeRoHS CompliantHalogen-FreeSON 2-mm × 2-mm Plastic PackageAPPLICATIONSDC-DC ConvertersBattery and Load Management ApplicationsAll other trademarks are the property of their respective ownersOptimized for 5-V Gate DriveUltra-Low Qgand QgdLow Thermal ResistancePb-FreeRoHS CompliantHalogen-FreeSON 2-mm × 2-mm Plastic PackageAPPLICATIONSDC-DC ConvertersBattery and Load Management ApplicationsAll other trademarks are the property of their respective owners
Description
AI
This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.
This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.