CSD17312 Series
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.7 mOhm
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.7 mOhm
| Part | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Package / Case | Technology | Mounting Type | Vgs (Max) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD17312Q5 | 38 A, 100 A | 150 °C | -55 °C | 36 nC | 8-VSON-CLIP (5x6) | N-Channel | 5240 pF | 1.5 mOhm | 3 V, 8 V | 3.2 W | 30 V | 8-PowerTDFN | MOSFET (Metal Oxide) | Surface Mount | -8 V, 10 V | 1.5 V |
Key Features
• Optimized for 5V Gate DriveUltra Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageAPPLICATIONSNotebook Point-of-LoadPoint-of-Load Synchronous Buck in Networking,Telecom and Computing SystemsNexFET is a trademark of Texas Instruments.Optimized for 5V Gate DriveUltra Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageAPPLICATIONSNotebook Point-of-LoadPoint-of-Load Synchronous Buck in Networking,Telecom and Computing SystemsNexFET is a trademark of Texas Instruments.
Description
AI
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.