CSD17307Q5A Series
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 12.1 mOhm
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 12.1 mOhm
| Part | Vgs(th) (Max) @ Id [Max] | Rds On (Max) @ Id, Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Technology | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Vgs (Max) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD17307Q5A | 1.8 V | 10.5 mOhm | 14 A, 73 A | 8-VSONP (5x6) | MOSFET (Metal Oxide) | N-Channel | 3 V, 8 V | 5.2 nC | 8-PowerTDFN | -8 V, 10 V | 30 V | 3 W | 700 pF | 150 °C | -55 °C | Surface Mount |
Key Features
• Optimized for 5V Gate DriveUltralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageAPPLICATIONSNotebook Point of LoadPoint-of-Load Synchronous Buck in Networking, Telecom and Computing SystemsOptimized for 5V Gate DriveUltralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageAPPLICATIONSNotebook Point of LoadPoint-of-Load Synchronous Buck in Networking, Telecom and Computing Systems
Description
AI
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.