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STMicroelectronics

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(2458)

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Part	Values	Type	Height [z]	Height [z]	Technology	Mounting Type	Package / Case	ESD Protection	Number of Channels [custom]	Filter Order	Resistance - Channel (Ohms)	Applications	Operating Temperature [Min]	Operating Temperature [Max]	Size / Dimension [x]	Size / Dimension [y]	Size / Dimension [x]	Size / Dimension [y]	Peripherals	Core Processor	Program Memory Type	Speed	Voltage - Supply (Vcc/Vdd) [Max]	Voltage - Supply (Vcc/Vdd) [Min]	Core Size	Connectivity	Program Memory Size	Number of I/O	Supplier Device Package	Oscillator Type	Data Converters [custom]	Data Converters [custom]	RAM Size	Grade	Qualification	Utilized IC / Part	Supplied Contents	Board Type	Amplifier Type	Channels per IC	Voltage Dropout (Max) [Max]	Control Features	Voltage - Input (Max) [Max]	Current - Output	Number of Regulators	Current - Supply (Max) [Max]	Output Configuration	Protection Features	Output Type	PSRR [Max]	PSRR [Min]	For Use With/Related Products	Frequency [Max]	Frequency [Min]	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Fault Protection	Number of Outputs	Input Type	Output Type	Current - Output (Max) [Max]	Ratio - Input:Output [custom]	Switch Type	Voltage - Load	Rds On (Typ)	Interface	Voltage - Supply (Vcc/Vdd)
STMicroelectronics EMIF09-SD01F3	20 pF 40 Ohms	Low Pass	0.026 in	0.65 mm	RC (Pi)	Surface Mount	24-WFBGA FCBGA		9	2nd	40 Ohms	General Purpose	-30 ░C	85 °C	0.076 in	1.92 mm	1.92 mm	0.076 in
STMicroelectronics STM32F412ZGJ7						Surface Mount	144-UFBGA						-40 °C	105 °C					Brown-out Detect/Reset DMA I2S LCD POR PWM WDT	ARM® Cortex®-M4	FLASH	100 MHz	3.6 V	1.7 V	32-Bit Single-Core	CANbus EBI/EMI I2C IrDA LINbus MMC/SD/SDIO QSPI SPI UART/USART USB USB OTG	1 MB	114	144-UFBGA (10x10)	Internal	16	12 b	256 K
STMicroelectronics SPC560D40L1B3E0X						Surface Mount	64-LQFP						-40 °C	105 °C					DMA LVD POR PWM WDT	e200z0h	FLASH	32 MHz	5.5 V	3 V	32-Bit Single-Core	CANbus LINbus SPI UART/USART	256 KB	45	64-LQFP (10x10)	Internal	16	12 b	16 K	Automotive	AEC-Q100
STMicroelectronics SPC560D30L1B4E0X						Surface Mount	64-LQFP						-40 °C	105 °C					DMA LVD POR PWM WDT	e200z0h	FLASH	48 MHz	5.5 V	3 V	32-Bit Single-Core	CANbus LINbus SPI UART/USART	128 KB	45	64-LQFP (10x10)	Internal	16	12 b	12 K	Automotive	AEC-Q100
STMicroelectronics STEVAL-CCA036V1																																				8-SOIC Package	Board(s)	Bare (Unpopulated)	General Purpose	1 - Single
STMicroelectronics LDLN025J30R						Surface Mount	4-XFBGA FCBGA						-40 °C	125 ¯C															4-FlipChip (0.63x0.63)												0.2 V	Enable	5.5 V	250 mA	1	425 µA	Positive	Over Current Over Temperature Short Circuit Soft Start	1.81 mOhm	80 dB	60 dB
STMicroelectronics ST25RU3993-EVAL		RFID Reader																																			Board(s)															ST25RU3993	960 MHz	840 MHz
STMicroelectronics STM32F401CBY6TT						Surface Mount	49-UFBGA WLCSP						-40 °C	85 °C					Brown-out Detect/Reset DMA I2S POR PWM WDT	ARM® Cortex®-M4	FLASH	84 MHz	3.6 V	1.7 V	32-Bit Single-Core	I2C IrDA LINbus SDIO SPI UART/USART USB OTG	128 KB	36	49-WLCSP	Internal			64 K
STMicroelectronics STP12NM60N					MOSFET (Metal Oxide)	Through Hole	TO-220-3						-55 °C	150 °C															TO-220																										25 V	N-Channel	960 pF	10 A	4 V	600 V	90 W	30.5 nC	410 mOhm	10 V
STMicroelectronics VND1NV04						Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3						-40 °C	150 °C															DPAK																		Low Side																		Current Limiting (Fixed) Over Temperature Over Voltage	1	Non-Inverting	N-Channel	1.7 A	1:1	General Purpose	36 V	250 mOhm	On/Off

Series	Category	# Parts	Status	Description

STMicroelectronicsSTD100	FETs, MOSFETs	1	8
STMicroelectronicsSTD10N60DM2P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in DPAK package	Single	6	1	The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as... Read More
STMicroelectronicsSTD110N8F6N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK package	Single FETs, MOSFETs	1	1	This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.
STMicroelectronicsSTD11N50M2N-channel 600 V, 500 mOhm typ., 8 A MDmesh M6 Power MOSFET in a DPAK package	Single FETs, MOSFETs	4	1	The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as... Read More
STMicroelectronicsSTD12NF06LT4N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package	Single Bipolar Transistors	6	1	This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for... Read More
STMicroelectronicsSTD13003High voltage fast-switching NPN power transistor	Single Bipolar Transistors	1	1	The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost... Read More
STMicroelectronicsSTD134N4F7AGAutomotive-grade N-channel 40 V, 2.5 mOhm typ., 80 A STripFET F7 Power MOSFET in a DPAK package	Transistors	1	1	This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
STMicroelectronicsSTD13N60M6N-channel 600 V, 320 mOhm typ., 10 A MDmesh M6 Power MOSFET in a DPAK package	Discrete Semiconductor Products	2	1	The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as... Read More
STMicroelectronicsSTD14	FETs, MOSFETs	1	8
STMicroelectronicsSTD15N65M5N-channel 650 V, 0.308 Ohm typ., 11 A MDmesh M5 Power MOSFET in DPAK package	Single	2	1	This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.