STD10N60DM2 Series

P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in DPAK package

Catalog

P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in DPAK package

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max) [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [x]	Power Dissipation (Max)
STMicroelectronics STD10P6F6	60 V	DPAK	P-Channel	6.4 nC	20 V	340 pF	4 V	Surface Mount	35 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 A	160 mOhm	175 °C	10 V	MOSFET (Metal Oxide)
STMicroelectronics STD10N60DM2	650 V	DPAK	N-Channel		25 V		5 V	Surface Mount	109 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	8 A			10 V	MOSFET (Metal Oxide)	-55 °C	150 °C	530 mOhm
STMicroelectronics STD100N03LT4	30 V	DPAK	N-Channel		20 V	2060 pF	1 V	Surface Mount	110 W	DPAK (2 Leads + Tab) SC-63 TO-252-3		5.5 mOhm			MOSFET (Metal Oxide)	-55 °C	175 ░C		10 V	5 V	27 nC
STMicroelectronics STD10NM60ND	600 V	DPAK	N-Channel		25 V	577 pF	5 V	Surface Mount		DPAK (2 Leads + Tab) SC-63 TO-252-3	8 A	600 mOhm		10 V	MOSFET (Metal Oxide)	-55 °C	150 °C					20 nC	70 W
STMicroelectronics STD10LN80K5	800 V	TO-252 (DPAK)	N-Channel		30 V	427 pF	5 V	Surface Mount	110 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	8 A	630 mOhm		10 V	MOSFET (Metal Oxide)	-55 °C	150 °C
STMicroelectronics STD10N60M6	600 V	TO-252 (DPAK)	N-Channel		25 V	338 pF	4.75 V	Surface Mount		DPAK (2 Leads + Tab) SC-63 TO-252-3	6.4 A	600 mOhm		10 V	MOSFET (Metal Oxide)	-55 °C	150 °C				8.8 nC		60 W

Catalog

P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in DPAK package

Description

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.