STD10N60DM2

Active

STMicroelectronics

N-CHANNEL 600 V, 440 MOHM TYP., 8 A MDMESH DM2 POWER MOSFET IN A DPAK PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsTN1378 +20

STD10N60DM2

Active

STMicroelectronics

N-CHANNEL 600 V, 440 MOHM TYP., 8 A MDMESH DM2 POWER MOSFET IN A DPAK PACKAGE

Deep-Dive with AI

DocumentsTN1378 +20

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD10N60DM2

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	109 W
Rds On (Max) @ Id, Vgs [Max]	530 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STD10N60DM2 Series

P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in DPAK package

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max) [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [x]	Power Dissipation (Max)
STMicroelectronics STD10P6F6	60 V	DPAK	P-Channel	6.4 nC	20 V	340 pF	4 V	Surface Mount	35 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 A	160 mOhm	175 °C	10 V	MOSFET (Metal Oxide)
STMicroelectronics STD10N60DM2	650 V	DPAK	N-Channel		25 V		5 V	Surface Mount	109 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	8 A			10 V	MOSFET (Metal Oxide)	-55 °C	150 °C	530 mOhm
STMicroelectronics STD100N03LT4	30 V	DPAK	N-Channel		20 V	2060 pF	1 V	Surface Mount	110 W	DPAK (2 Leads + Tab) SC-63 TO-252-3		5.5 mOhm			MOSFET (Metal Oxide)	-55 °C	175 ░C		10 V	5 V	27 nC
STMicroelectronics STD10NM60ND	600 V	DPAK	N-Channel		25 V	577 pF	5 V	Surface Mount		DPAK (2 Leads + Tab) SC-63 TO-252-3	8 A	600 mOhm		10 V	MOSFET (Metal Oxide)	-55 °C	150 °C					20 nC	70 W
STMicroelectronics STD10LN80K5	800 V	TO-252 (DPAK)	N-Channel		30 V	427 pF	5 V	Surface Mount	110 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	8 A	630 mOhm		10 V	MOSFET (Metal Oxide)	-55 °C	150 °C
STMicroelectronics STD10N60M6	600 V	TO-252 (DPAK)	N-Channel		25 V	338 pF	4.75 V	Surface Mount		DPAK (2 Leads + Tab) SC-63 TO-252-3	6.4 A	600 mOhm		10 V	MOSFET (Metal Oxide)	-55 °C	150 °C				8.8 nC		60 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.44
		10	$ 1.18
		100	$ 0.91
		500	$ 0.77
		1000	$ 0.63
	Digi-Reel®	1	$ 1.44
		10	$ 1.18
		100	$ 0.91
		500	$ 0.77
		1000	$ 0.63
	Tape & Reel (TR)	2500	$ 0.59
		5000	$ 0.57
		12500	$ 0.54

Description

General part information

STD10N60DM2 Series

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

STD10N60DM2

Deep-Dive with AI

STD10N60DM2

Deep-Dive with AI

Technical Specifications

STD10N60DM2 Series

Pricing

Description

STD10N60DM2 Series

Documents

TN1378

AN4250

TN1156

AN2344

TN1225

AN4720

AN5427

AN4337

DS11669

UM1575

TN1224

AN2842

AN2626

Datasheet

STD10N60DM2 Series