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STD10NM60ND - MFG_DPAK(TO252-3)

STD10NM60ND

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STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 8 A, 600 V, 0.57 OHM, 10 V, 4 V ROHS COMPLIANT: YES

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STD10NM60ND - MFG_DPAK(TO252-3)

STD10NM60ND

Active
STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 8 A, 600 V, 0.57 OHM, 10 V, 4 V ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD10NM60ND
Current - Continuous Drain (Id) @ 25°C8 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [x]20 nC
Input Capacitance (Ciss) (Max) @ Vds577 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)70 W
Rds On (Max) @ Id, Vgs600 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.06
10$ 1.71
100$ 1.36
500$ 1.15
1000$ 0.98
Digi-Reel® 1$ 2.06
10$ 1.71
100$ 1.36
500$ 1.15
1000$ 0.98
Tape & Reel (TR) 2500$ 0.87
NewarkEach 1$ 2.72
10$ 2.11
100$ 1.54
500$ 1.30
1000$ 1.21
2500$ 1.13
10000$ 1.10

Description

General part information

STD10N60DM2 Series

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.