STD100N03LT4

Obsolete

STMicroelectronics

MOSFET N-CH 30V 80A DPAK

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STD100N03LT4

Obsolete

STMicroelectronics

MOSFET N-CH 30V 80A DPAK

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Description Specifications Series Pricing CAD Documents

Description

General part information

STD10 Series

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Technical Specifications

Parameters and characteristics for this part

Specification	STD100N03LT4

Current - Continuous Drain (Id) (Tc)	80 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	27 nC
Input Capacitance (Ciss) (Max)	2060 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	DPak
Power Dissipation (Max)	110 W
Rds On (Max)	5.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	1 V

STD10 Series

P-channel 100 V, 0.136 Ohm typ., 10 A STripFET F6 Power MOSFET in a DPAK package

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package Name	Vgs(th) (Max)	Package / Case	Rds On (Max)	Operating Temperature	Gate Charge (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)	FET Type	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
STMicroelectronics STD10P6F6	35 W	10 V	DPak	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	160 mOhm	175 °C	6.4 nC	20 V	60 V	340 pF	Surface Mount	10 A	P-Channel	MOSFET (Metal Oxide)
STMicroelectronics STD10PF06-1	40 W	10 V	IPAK	4 V	IPAK TO-251-3 Short Leads TO-251AA	200 mOhm	175 °C	21 nC	20 V	60 V	850 pF	Through Hole	10 A	P-Channel	MOSFET (Metal Oxide)
STMicroelectronics STD10N60DM2	109 W	10 V	DPak	5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	530 mOhm		15 nC	25 V	650 V	529 pF	Surface Mount	8 A	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C
STMicroelectronics STD10P10F6	40 W	10 V	DPak	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	180 mOhm	175 °C	16.5 nC	20 V	100 V	864 pF	Surface Mount	10 A	P-Channel	MOSFET (Metal Oxide)
STMicroelectronics STD100N03LT4	110 W		DPak	1 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	5.5 mOhm		27 nC	20 V	30 V	2060 pF	Surface Mount	80 A	N-Channel	MOSFET (Metal Oxide)	-55 °C	175 °C	10 V	5 V
STMicroelectronics STD10NM60ND	70 W	10 V	DPak	5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 mOhm		20 nC	25 V	600 V	577 pF	Surface Mount	8 A	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C
STMicroelectronics STD10LN80K5	110 W	10 V	TO-252 (DPAK)	5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	630 mOhm		15 nC	30 V	800 V	427 pF 427 pF	Surface Mount	8 A	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C
STMicroelectronics STD100NH02LT4	100 W		DPak	1.8 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.8 mOhm		84 nC	20 V	24 V	3940 pF	Surface Mount	60 A	N-Channel	MOSFET (Metal Oxide)	-55 °C	175 °C	10 V	5 V
STMicroelectronics STD10N60M6	60 W	10 V	TO-252 (DPAK)	4.75 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 mOhm		8.8 nC	25 V	600 V	338 pF	Surface Mount	6.4 A	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

STD100N03LT4 | Datasheet