STD110N8F6 Series

N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK package

Catalog

N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK package

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Supplier Device Package	Technology
STMicroelectronics STD110N8F6	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	175 ░C	6.5 mOhm	80 V	150 nC	10 V	N-Channel	167 W	9130 pF	4.5 V	20 V	Surface Mount	DPAK	MOSFET (Metal Oxide)

Catalog

N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK package

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.