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STD110N8F6 - MFG_DPAK(TO252-3)

STD110N8F6

Active
STMicroelectronics

N-CHANNEL 80 V, 0.0056 OHM TYP., 110 A, STRIPFET F6 POWER MOSFET IN A DPAK PACKAGE

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Search across all available documentation for this part.

DocumentsProduct Change Notice ENTechnical Data Sheet EN+15
STD110N8F6 - MFG_DPAK(TO252-3)

STD110N8F6

Active
STMicroelectronics

N-CHANNEL 80 V, 0.0056 OHM TYP., 110 A, STRIPFET F6 POWER MOSFET IN A DPAK PACKAGE

Deep-Dive with AI

DocumentsProduct Change Notice ENTechnical Data Sheet EN+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD110N8F6
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs150 nC
Input Capacitance (Ciss) (Max) @ Vds9130 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)167 W
Rds On (Max) @ Id, Vgs6.5 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.66
10$ 1.38
100$ 1.10
500$ 0.93
1000$ 0.79
Digi-Reel® 1$ 1.66
10$ 1.38
100$ 1.10
500$ 0.93
1000$ 0.79
Tape & Reel (TR) 2500$ 0.75
5000$ 0.72
12500$ 0.70
NewarkEach (Supplied on Cut Tape) 1$ 1.42

Description

General part information

STD110N8F6 Series

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.