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STMicroelectronics

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(2458)

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Part	Values	Type	Height [z]	Height [z]	Technology	Mounting Type	Package / Case	ESD Protection	Number of Channels [custom]	Filter Order	Resistance - Channel (Ohms)	Applications	Operating Temperature [Min]	Operating Temperature [Max]	Size / Dimension [x]	Size / Dimension [y]	Size / Dimension [x]	Size / Dimension [y]	Peripherals	Core Processor	Program Memory Type	Speed	Voltage - Supply (Vcc/Vdd) [Max]	Voltage - Supply (Vcc/Vdd) [Min]	Core Size	Connectivity	Program Memory Size	Number of I/O	Supplier Device Package	Oscillator Type	Data Converters [custom]	Data Converters [custom]	RAM Size	Grade	Qualification	Utilized IC / Part	Supplied Contents	Board Type	Amplifier Type	Channels per IC	Voltage Dropout (Max) [Max]	Control Features	Voltage - Input (Max) [Max]	Current - Output	Number of Regulators	Current - Supply (Max) [Max]	Output Configuration	Protection Features	Output Type	PSRR [Max]	PSRR [Min]	For Use With/Related Products	Frequency [Max]	Frequency [Min]	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Fault Protection	Number of Outputs	Input Type	Output Type	Current - Output (Max) [Max]	Ratio - Input:Output [custom]	Switch Type	Voltage - Load	Rds On (Typ)	Interface	Voltage - Supply (Vcc/Vdd)
STMicroelectronics EMIF09-SD01F3	20 pF 40 Ohms	Low Pass	0.026 in	0.65 mm	RC (Pi)	Surface Mount	24-WFBGA FCBGA		9	2nd	40 Ohms	General Purpose	-30 ░C	85 °C	0.076 in	1.92 mm	1.92 mm	0.076 in
STMicroelectronics STM32F412ZGJ7						Surface Mount	144-UFBGA						-40 °C	105 °C					Brown-out Detect/Reset DMA I2S LCD POR PWM WDT	ARM® Cortex®-M4	FLASH	100 MHz	3.6 V	1.7 V	32-Bit Single-Core	CANbus EBI/EMI I2C IrDA LINbus MMC/SD/SDIO QSPI SPI UART/USART USB USB OTG	1 MB	114	144-UFBGA (10x10)	Internal	16	12 b	256 K
STMicroelectronics SPC560D40L1B3E0X						Surface Mount	64-LQFP						-40 °C	105 °C					DMA LVD POR PWM WDT	e200z0h	FLASH	32 MHz	5.5 V	3 V	32-Bit Single-Core	CANbus LINbus SPI UART/USART	256 KB	45	64-LQFP (10x10)	Internal	16	12 b	16 K	Automotive	AEC-Q100
STMicroelectronics SPC560D30L1B4E0X						Surface Mount	64-LQFP						-40 °C	105 °C					DMA LVD POR PWM WDT	e200z0h	FLASH	48 MHz	5.5 V	3 V	32-Bit Single-Core	CANbus LINbus SPI UART/USART	128 KB	45	64-LQFP (10x10)	Internal	16	12 b	12 K	Automotive	AEC-Q100
STMicroelectronics STEVAL-CCA036V1																																				8-SOIC Package	Board(s)	Bare (Unpopulated)	General Purpose	1 - Single
STMicroelectronics LDLN025J30R						Surface Mount	4-XFBGA FCBGA						-40 °C	125 ¯C															4-FlipChip (0.63x0.63)												0.2 V	Enable	5.5 V	250 mA	1	425 µA	Positive	Over Current Over Temperature Short Circuit Soft Start	1.81 mOhm	80 dB	60 dB
STMicroelectronics ST25RU3993-EVAL		RFID Reader																																			Board(s)															ST25RU3993	960 MHz	840 MHz
STMicroelectronics STM32F401CBY6TT						Surface Mount	49-UFBGA WLCSP						-40 °C	85 °C					Brown-out Detect/Reset DMA I2S POR PWM WDT	ARM® Cortex®-M4	FLASH	84 MHz	3.6 V	1.7 V	32-Bit Single-Core	I2C IrDA LINbus SDIO SPI UART/USART USB OTG	128 KB	36	49-WLCSP	Internal			64 K
STMicroelectronics STP12NM60N					MOSFET (Metal Oxide)	Through Hole	TO-220-3						-55 °C	150 °C															TO-220																										25 V	N-Channel	960 pF	10 A	4 V	600 V	90 W	30.5 nC	410 mOhm	10 V
STMicroelectronics VND1NV04						Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3						-40 °C	150 °C															DPAK																		Low Side																		Current Limiting (Fixed) Over Temperature Over Voltage	1	Non-Inverting	N-Channel	1.7 A	1:1	General Purpose	36 V	250 mOhm	On/Off

Series	Category	# Parts	Status	Description

STMicroelectronicsSTD2N	Discrete Semiconductor Products	1	8
STMicroelectronicsSTD2N105K5N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in DPAK package	Discrete Semiconductor Products	1	1	This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
STMicroelectronicsSTD2N80K5N-channel 800 V, 3.5 Ohm typ., 2 A MDmesh K5 Power MOSFET in a DPAK package	Transistors	1	1	This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
STMicroelectronicsSTD2N95K5N-channel 950 V, 4.2 Ohm typ., 2 A MDmesh K5 Power MOSFET in DPAK package	Discrete Semiconductor Products	1	1	This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
STMicroelectronicsSTD30N6LF6AGAutomotive-grade N-channel 60 V, 19 mOhm typ., 24 A STripFET F6 Power MOSFET in a DPAK package	Transistors	3	1	This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STMicroelectronicsSTD35NF06LN-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a DPAK package	FETs, MOSFETs	3	1	This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving... Read More
STMicroelectronicsSTD37	FETs, MOSFETs	1	8
STMicroelectronicsSTD3N	FETs, MOSFETs	2	8
STMicroelectronicsSTD3N62K3N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in DPAK package	Transistors	1	1	These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
STMicroelectronicsSTD3N80K5N-channel 800 V, 2.8 Ohm typ., 2.5 MDmesh K5 Power MOSFET in a DPAK package	FETs, MOSFETs	1	1	This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.